K4AAG165WM-BCWE vs K4AAG085WM-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG165WM-BCWE disebabkan oleh Samsung Electronics dan K4AAG085WM-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG165WM-BCWE | K4AAG085WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organisasi | 256M x 16 (1G x 16) | 2G x 8 |
| Kadar Data | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Antaramuka | Parallel (DDR4) | DDR4 (JEDEC-standard) |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| Latensi CAS | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| Kemasan | 78-ball FBGA | 78FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| Aras MSL | — | [DATA_NEEDED: MSL level] |