K4AAG165WM-BCWE vs K4AAG085WM-BCWE 比較
詳細並排比較 K4AAG165WM-BCWE 由 Samsung Electronics 與 K4AAG085WM-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG165WM-BCWE | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 組織 | 256M x 16 (1G x 16) | 2G x 8 |
| 資料速率 | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| 介面 | Parallel (DDR4) | DDR4 (JEDEC-standard) |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| CAS 延遲 | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| 封裝 | 78-ball FBGA | 78FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| 供應電壓 | — | 1.2 V |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |