K4AAG165WM-BCWE vs K4AAG165WM-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG165WM-BCWE disebabkan oleh Samsung Electronics dan K4AAG165WM-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG165WM-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organisasi | 256M x 16 (1G x 16) | 1G x 16 |
| Kadar Data | 3200 Mbps | — |
| Antaramuka | Parallel (DDR4) | SSTL-12 |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| Latensi CAS | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| Kemasan | 78-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA solder reflow) |
| Suhu Operasi | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| Status RoHS | Compliant | RoHS (per LCSC listing) |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| Speed | — | 2666 Mbps |
| Tegangan Pemberi Arus | — | 1.2 V (1.14 V to 1.26 V) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |