K4AAG165WM-BCWE vs K4AAG165WM-BCTD 比較
詳細並排比較 K4AAG165WM-BCWE 由 Samsung Electronics 與 K4AAG165WM-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG165WM-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 組織 | 256M x 16 (1G x 16) | 1G x 16 |
| 資料速率 | 3200 Mbps | — |
| 介面 | Parallel (DDR4) | SSTL-12 |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| CAS 延遲 | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| 封裝 | 78-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| 安裝類型 | Surface Mount | Surface Mount (BGA solder reflow) |
| 工作溫度 | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| RoHS 狀態 | Compliant | RoHS (per LCSC listing) |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| Speed | — | 2666 Mbps |
| 供應電壓 | — | 1.2 V (1.14 V to 1.26 V) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |