K4B4G1646D-BCMA0 vs K4B4G1646E-BMMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCMA0 disebabkan oleh Samsung Electronics dan K4B4G1646E-BMMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung
K4B4G1646D-BCMA0 ✗ Akhir Hayat
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BCMA0 | K4B4G1646E-BMMA |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Harga Unit (USD) | — | $16.08 |
| Jenis Ingatan | DDR3 SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1866 Mbps | 1600 Mbps |
| Tegangan Pemberi Arus | 1.5 V | 1.35 V |
| Suhu Operasi | 0°C to 85°C | -40°C to +95°C |
| Kemasan | 96-FBGA | 96-FBGA (9x13 mm) |
| Jenis Pemasangan | Surface Mount | — |
| Memory Interface | Parallel | — |
| RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Lead Free | Yes | — |
| Status Lingkungan Hidup | EOL | — |
| Technology | DDR3 | — |
| Number of Terminals | 96 | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes (Dynamic ODT) |
| ZQ Calibration | — | Yes |
| Lead-Free | — | Yes |