K4B4G1646D-BYK00 vs NT5CC256M16DP-DI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYK00 disebabkan oleh Samsung Electronics dan NT5CC256M16DP-DI disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BYK00 | NT5CC256M16DP-DI |
|---|---|---|
| Merek | Samsung Electronics | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1600 Mbps | 1600 Mbps/pin (800MHz) |
| Tegangan Pemberi Arus | 1.35 V (also operates at 1.5 V) | 1.35V |
| Kemasan | 96-ball TFBGA | VFBGA-96 |
| Number of Terminals | 96 | — |
| Suhu Operasi | 0°C to 85°C | — |
| Latensi CAS | Programmable | 11, 12, 13 (programmable) |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Gambaran Suhu Operasi | — | -40°C to +95°C (industrial) |
| Burst Length | — | 8, 4 (with burst chop) |
| Number of Banks | — | 8 |
| Antaramuka | — | Differential clock (CK, CK#) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |