K4B4G1646D-BYK00 vs NT5CC256M16DP-DI 比較
詳細並排比較 K4B4G1646D-BYK00 由 Samsung Electronics 與 NT5CC256M16DP-DI 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 啟用中
規格比較
| 參數 | K4B4G1646D-BYK00 | NT5CC256M16DP-DI |
|---|---|---|
| 品牌 | Samsung Electronics | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 資料速率 | 1600 Mbps | 1600 Mbps/pin (800MHz) |
| 供應電壓 | 1.35 V (also operates at 1.5 V) | 1.35V |
| 封裝 | 96-ball TFBGA | VFBGA-96 |
| Number of Terminals | 96 | — |
| 工作溫度 | 0°C to 85°C | — |
| CAS 延遲 | Programmable | 11, 12, 13 (programmable) |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 無鹵素 | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| 工作溫度範圍 | — | -40°C to +95°C (industrial) |
| Burst Length | — | 8, 4 (with burst chop) |
| Number of Banks | — | 8 |
| 介面 | — | Differential clock (CK, CK#) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |