K4B4G1646D-BYK00 vs NT5CC256M16DP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BYK00 sa pamamagitan ng Samsung Electronics at NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4B4G1646D-BYK00 | NT5CC256M16DP-DI |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Rate ng Data | 1600 Mbps | 1600 Mbps/pin (800MHz) |
| Volte ng Pagbibigay | 1.35 V (also operates at 1.5 V) | 1.35V |
| Packhaging | 96-ball TFBGA | VFBGA-96 |
| Number of Terminals | 96 | — |
| Temperature na Operasyon | 0°C to 85°C | — |
| Latensya ng CAS | Programmable | 11, 12, 13 (programmable) |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C (industrial) |
| Burst Length | — | 8, 4 (with burst chop) |
| Number of Banks | — | 8 |
| Interface | — | Differential clock (CK, CK#) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |