K4B4G1646E-BYMA vs H5TC4G63CFR-H9I Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYMA disebabkan oleh Samsung Electronics dan H5TC4G63CFR-H9I disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BYMA | H5TC4G63CFR-H9I |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14.32 | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.28 V to 1.575 V) | 1.35 V |
| Clock Frequency | 933 MHz | — |
| Kadar Data | 1866 Mbps/pin | 1866 Mbps (PC3-14900) |
| Suhu Operasi | 0°C to +95°C | — |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Kemasan | FBGA-96 | 96-ball TFBGA |
| Jenis Pemasangan | Surface Mount | — |
| RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | Programmable (11, 12, 13) |
| Burst Length | [DATA_NEEDED: Burst Length] | 8 and 4 |
| Bilangan Pin | 96 | — |
| I/O Voltage | — | 1.35 V |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Number of Terminals | — | 96 |
| Memory Width | — | 16 bits |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| On-Die Termination | — | Yes |
| Refresh Modes | — | Auto-refresh, Self-refresh |