K4B4G1646E-BYMA vs H5TC4G63CFR-H9I 比較
詳細並排比較 K4B4G1646E-BYMA 由 Samsung Electronics 與 H5TC4G63CFR-H9I 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646E-BYMA | H5TC4G63CFR-H9I |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $14.32 | — |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35 V (1.28 V to 1.575 V) | 1.35 V |
| Clock Frequency | 933 MHz | — |
| 資料速率 | 1866 Mbps/pin | 1866 Mbps (PC3-14900) |
| 工作溫度 | 0°C to +95°C | — |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| 封裝 | FBGA-96 | 96-ball TFBGA |
| 安裝類型 | Surface Mount | — |
| RoHS | Compliant | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | Programmable (11, 12, 13) |
| Burst Length | [DATA_NEEDED: Burst Length] | 8 and 4 |
| 腳位數 | 96 | — |
| I/O Voltage | — | 1.35 V |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Number of Terminals | — | 96 |
| Memory Width | — | 16 bits |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| RoHS Compliant | — | Yes |
| On-Die Termination | — | Yes |
| Refresh Modes | — | Auto-refresh, Self-refresh |