K4RHE086VB-BCWM vs K4RAH086VB-BIQK Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RHE086VB-BCWM disebabkan oleh Samsung Electronics dan K4RAH086VB-BIQK disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4RHE086VB-BCWM K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM ✓ Aktif
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ Aktif

Pengandingan Spesifikasi

Parametr K4RHE086VB-BCWM K4RAH086VB-BIQK
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM
Density 24 Gb 16 Gb
Organisasi 2G x 8 2G x 8
Kadar Data 5600 Mbps 4800 Mbps/pin
Tegangan Pemberi Arus 1.1 V —
Kemasan 82 FBGA 82FBGA
Jenis Pemasangan Surface Mount —
Antaramuka DDR5 (JEDEC) DDR5 (CA reduced pin count)
Configuration x8 X8
Application Segment Server / Data Center / Premium PC —
Manufacturer Samsung Semiconductor —
Status RoHS unknown Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Access Time / CAS Latency [DATA_NEEDED: CAS latency] —
On-Die ECC [DATA_NEEDED: on-die ECC support] —
Package Height [DATA_NEEDED: package height] —
Core Supply Voltage — 1.1 V (nominal)
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
Burst Length — 16 / 32
Operating Mode — DLL enabled
Latensi CAS — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]
Aras MSL — [DATA_NEEDED: moisture sensitivity level]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga