K6F3216U6M-EF70T vs K6X1008C2D-TF55 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6F3216U6M-EF70T disebabkan oleh Samsung Electronics dan K6X1008C2D-TF55 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | K6F3216U6M-EF70T | K6X1008C2D-TF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 32 Mbit | 1 Mbit |
| Organisasi | 2M x 16 | 128K x 8 |
| Tegangan Pemberi Arus | 3 V | — |
| Access Time | 55 ns | — |
| Antaramuka | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Low Power Full CMOS |
| Kemasan | 55-TFBGA (7.5 x 12 mm) | 32-TSOP REVERSE |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| Status RoHS | NO (per third-party listing) | RoHS: Yes (per distributor listing) |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current | — | 35 mA |
| Speed Options | — | 55 ns, 70 ns |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Memory Format | — | Volatile (SRAM) |
| Clock Frequency | — | N/A (asynchronous) |