K6X0808C1D-BF55 vs K6X0808C1D-BF70 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF55 disebabkan oleh Samsung Electronics dan K6X0808C1D-BF70 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF55 | K6X0808C1D-BF70 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | Asynchronous SRAM | Asynchronous SRAM (CMOS) |
| Saiz Ingatan | 256 Kbit | — |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 70 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 5 V | [DATA_NEEDED: Supply Voltage] |
| Technology | CMOS | CMOS |
| Kemasan | 28-SOP | 28-SOP (PDSO28) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +70C (commercial grade, BF suffix) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Memory Format | SRAM | — |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |