K6X0808C1D-BF70 vs K6X0808C1D-BF70T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70 disebabkan oleh Samsung Electronics dan K6X0808C1D-BF70T disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K6X0808C1D-BF70 | K6X0808C1D-BF70T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| Organisasi | 32K x 8 | — |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel | — |
| Technology | CMOS | — |
| Kemasan | 28-SOP (PDSO28) | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: Supply Voltage] | — |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Suhu Operasi | 0C to +70C (commercial grade, BF suffix) | -40C to +85C (TA) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Address Bus | A0-A14 (15 address lines) | — |
| Saiz Ingatan | — | 256 Kbit |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| Address Bus Width | — | 15 bit (A0-A14) |
| Lebar Bus Data | — | 8 bit (I/O0-I/O7) |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |