K6X0808C1D-BF70T vs K6X0808C1D-BF70 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70T disebabkan oleh Samsung Electronics dan K6X0808C1D-BF70 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K6X0808C1D-BF70T | K6X0808C1D-BF70 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | SRAM - Asynchronous | Asynchronous SRAM (CMOS) |
| Saiz Ingatan | 256 Kbit | — |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Suhu Operasi | -40C to +85C (TA) | 0C to +70C (commercial grade, BF suffix) |
| Kemasan | 28-SOP | 28-SOP (PDSO28) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| Lebar Bus Data | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| Organisasi | — | 32K x 8 |
| Antaramuka | — | Parallel |
| Technology | — | CMOS |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: Supply Voltage] |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |