K6X0808C1D-BF70T vs K6X0808C1D-BF70 比較
詳細並排比較 K6X0808C1D-BF70T 由 Samsung Electronics 與 K6X0808C1D-BF70 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K6X0808C1D-BF70T | K6X0808C1D-BF70 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 停產終止 |
| 記憶體類型 | SRAM - Asynchronous | Asynchronous SRAM (CMOS) |
| 記憶體容量 | 256 Kbit | — |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| 工作溫度 | -40C to +85C (TA) | 0C to +70C (commercial grade, BF suffix) |
| 封裝 | 28-SOP | 28-SOP (PDSO28) |
| 安裝類型 | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| 資料匯流排寬度 | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| 組織 | — | 32K x 8 |
| 介面 | — | Parallel |
| Technology | — | CMOS |
| 供應電壓 | — | [DATA_NEEDED: Supply Voltage] |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |