K6X1008C2D-TF55 vs K6X0808C1D-BF55 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X1008C2D-TF55 disebabkan oleh Samsung Electronics dan K6X0808C1D-BF55 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Akhir HayatSamsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X1008C2D-TF55 | K6X0808C1D-BF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | Asynchronous SRAM |
| Saiz Ingatan | 1 Mbit | 256 Kbit |
| Organisasi | 128K x 8 | 32K x 8 |
| Access Time (tAA) | 55 ns | — |
| Antaramuka | Parallel | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | [DATA_NEEDED: operating current] |
| Technology | Low Power Full CMOS | CMOS |
| Kemasan | 32-TSOP REVERSE | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Memory Format | Volatile (SRAM) | SRAM |
| Clock Frequency | N/A (asynchronous) | N/A (asynchronous) |
| Status RoHS | RoHS: Yes (per distributor listing) | unknown |
| Access Time | — | 55 ns |
| Tegangan Pemberi Arus | — | 5 V |
| Control Signals | — | CE, OE, WE |
| Refresh | — | Not required (static memory) |