K9PDG08U5M vs K9XXG08UXM Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K9PDG08U5M disebabkan oleh Samsung Electronics dan K9XXG08UXM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Akhir Hayat
Samsung Electronics
K9XXG08UXM K9XXG08UXM - 2G x 8 Bit NAND Flash Memory | Samsung

K9XXG08UXM - 2G x 8 Bit NAND Flash Memory | Samsung

K9XXG08UXM Obsolete

Pengandingan Spesifikasi

Parametr K9PDG08U5M K9XXG08UXM
Merek Samsung Electronics Samsung Electronics
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Akhir Hidup Obsolete
Jenis Ingatan NAND Flash (SLC) —
Density 4 Gbit —
Organisasi x8 (multiplexed I/O) —
Tegangan Pemberi Arus [DATA_NEEDED: supply voltage range] 2.7 V to 3.6 V
Kemasan TSOP1-48 48-pin TSOP
Jenis Pemasangan Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] (2K + 64) Byte
Block Size [DATA_NEEDED: block size] (256K + 8K) Byte
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
Endurance [DATA_NEEDED: program/erase cycles] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Saiz Ingatan — 2G x 8 Bit (2Gb)
Memory Cell Array Organization — (1G + 32M) bit x 8 bit
Data Register — (2K + 64) bit x 8 bit
Program Operation — Automatic Page Program, (2K + 64) Byte
Erase Operation — Automatic Block Erase, (256K + 8K) Byte
I/O Interface — 8-bit multiplexed address/data/command
Control Signals — CLE, ALE, CE, RE, WE, WP, R/B
Cell Type — SLC (single-level cell) NAND
Access Time (tR) — [DATA_NEEDED: Access Time]

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