K9PDG08U5M vs K9XXG08UXM 比較
詳細並排比較 K9PDG08U5M 由 Samsung Electronics 與 K9XXG08UXM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9PDG08U5M | K9XXG08UXM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 停產終止 | Obsolete |
| 記憶體類型 | NAND Flash (SLC) | — |
| Density | 4 Gbit | — |
| 組織 | x8 (multiplexed I/O) | — |
| 供應電壓 | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| 封裝 | TSOP1-48 | 48-pin TSOP |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| 記憶體容量 | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |