K9PDG08U5M vs K9XXG08UXM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9PDG08U5M sa pamamagitan ng Samsung Electronics at K9XXG08UXM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Tapus ng Buhay
Pagsanggunian na paghahambing
| Parametro | K9PDG08U5M | K9XXG08UXM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | EEPROM | Memory ICs |
| Katayuan ng Lifecycle | Tapus ng Buhay | Obsolete |
| Uri ng Memory | NAND Flash (SLC) | — |
| Density | 4 Gbit | — |
| Organisasyon | x8 (multiplexed I/O) | — |
| Volte ng Pagbibigay | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| Packhaging | TSOP1-48 | 48-pin TSOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Laki ng Memory | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |