M29F200FT55N3F2 vs M29F400FB55N3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FT55N3F2 disebabkan oleh Micron Technology dan M29F400FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F200FT55N3F2 M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 ✓ Aktif
Micron Technology
M29F400FB55N3F2 M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 ✓ Aktif

Pengandingan Spesifikasi

Parametr M29F200FT55N3F2 M29F400FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash, Parallel NOR Flash
Density 2 Mbit (2097 kbits) 4 Mbit (4194 kbit)
Organisasi 256K x 8-bit / 128K x 16-bit 256K x 16 / 512K x 8
Supply Voltage (VCC) 5 V —
Access Time 55 ns 55 ns
Number of Words 128 K —
Bits per Word 16 bits —
Boot Block Architecture Top Boot Block —
Program/Erase Embedded byte/word program algorithms —
Suhu Operasi -40C to +125C -40C to +125C
Kemasan 48-pin TSOP 48-TSOP I
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka Parallel, BYTE pin selects 8/16-bit bus Parallel
Packaging Tape & Reel (TR suffix) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free build per F2 suffix)
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Tegangan Pemberi Arus — 5 V
Boot Block — Bottom boot block
Program/Erase Controller — Embedded byte/word program algorithms
Standard Package Quantity — 1500 units (Tape & Reel)
Active/Standby Current — [DATA_NEEDED: active and standby current]
Erase/Program Endurance — [DATA_NEEDED: endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
VIO Range — [DATA_NEEDED: I/O voltage range]

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