M29F200FT55N3F2 vs M29F400FB55N3F2 比較

詳細並排比較 M29F200FT55N3F2 由 Micron Technology 與 M29F400FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F200FT55N3F2 M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 ✓ 啟用中
Micron Technology
M29F400FB55N3F2 M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 ✓ 啟用中

規格比較

參數 M29F200FT55N3F2 M29F400FB55N3F2
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash, Parallel NOR Flash
Density 2 Mbit (2097 kbits) 4 Mbit (4194 kbit)
組織 256K x 8-bit / 128K x 16-bit 256K x 16 / 512K x 8
Supply Voltage (VCC) 5 V —
Access Time 55 ns 55 ns
Number of Words 128 K —
Bits per Word 16 bits —
Boot Block Architecture Top Boot Block —
Program/Erase Embedded byte/word program algorithms —
工作溫度 -40C to +125C -40C to +125C
封裝 48-pin TSOP 48-TSOP I
安裝類型 Surface Mount Surface Mount
介面 Parallel, BYTE pin selects 8/16-bit bus Parallel
Packaging Tape & Reel (TR suffix) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant (lead-free build per F2 suffix)
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
供應電壓 — 5 V
Boot Block — Bottom boot block
Program/Erase Controller — Embedded byte/word program algorithms
Standard Package Quantity — 1500 units (Tape & Reel)
Active/Standby Current — [DATA_NEEDED: active and standby current]
Erase/Program Endurance — [DATA_NEEDED: endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
VIO Range — [DATA_NEEDED: I/O voltage range]

資料表與資源

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