M29W320DT70N3E vs M29DW323DB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W320DT70N3E disebabkan oleh Micron Technology dan M29DW323DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W320DT70N3E | M29DW323DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | Flash - NOR |
| Saiz Ingatan | 32 Mbit | — |
| Organisasi | 4M x8 / 2M x16 | — |
| Antaramuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Read Current (typical) | 10 mA | — |
| Boot Block Architecture | Top boot (DT suffix) | — |
| Boot Region | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block | — |
| Kemasan | 48-TSOP I | 48-TSOP I |
| Package Length | 18.4 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 3 (168 Hours) | — |
| Peak Reflow Temperature Time | 30 s | — |
| Packaging | Tray | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Format | — | FLASH |
| Technology | — | FLASH - NOR Memory IC |
| Density | — | 32 Mb (4M x 8, 2M x 16) |
| Memory Organization | — | 4M x 8 / 2M x 16 |
| Tegangan Pemberi Arus | — | 3 V class (per manufacturer datasheet) |
| Boot Block Location | — | Bottom (DB variant) |
| Byte/Word Organization Select | — | Yes (BYTE pin) |
| Applications Domain | — | Embedded code storage / XIP |
| Standard Pack Quantity | — | [DATA_NEEDED: standard pack quantity] |