M29W320DT70N3E vs M29DW323DB70N3E 比較

詳細並排比較 M29W320DT70N3E 由 Micron Technology 與 M29DW323DB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W320DT70N3E M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E ✓ 啟用中
Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ 啟用中

規格比較

參數 M29W320DT70N3E M29DW323DB70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash Flash - NOR
記憶體容量 32 Mbit —
組織 4M x8 / 2M x16 —
介面 Parallel Parallel
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V —
Read Current (typical) 10 mA —
Boot Block Architecture Top boot (DT suffix) —
Boot Region 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block —
封裝 48-TSOP I 48-TSOP I
Package Length 18.4 mm —
安裝類型 Surface Mount Surface Mount
MSL 等級 3 (168 Hours) —
Peak Reflow Temperature Time 30 s —
Packaging Tray —
工作溫度 [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Cycles [DATA_NEEDED: endurance] —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Memory Format — FLASH
Technology — FLASH - NOR Memory IC
Density — 32 Mb (4M x 8, 2M x 16)
Memory Organization — 4M x 8 / 2M x 16
供應電壓 — 3 V class (per manufacturer datasheet)
Boot Block Location — Bottom (DB variant)
Byte/Word Organization Select — Yes (BYTE pin)
Applications Domain — Embedded code storage / XIP
Standard Pack Quantity — [DATA_NEEDED: standard pack quantity]

資料表與資源

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