MRF8P20161HSR3 vs MRF8P20160HSR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8P20161HSR3 disebabkan oleh NXP Semiconductors dan MRF8P20160HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF8P20161HSR3 | MRF8P20160HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Jenis Transistor | N-Channel Lateral MOSFET (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1880 MHz to 2025 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V | — |
| Average Output Power | 37 W (W-CDMA) | — |
| Small-Signal Gain | 16.4 dB at 1.92 GHz | — |
| Quiescent Drain Current (Idq) | 550 mA | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Kemasan | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount | — |
| Jenis Pemasangan | Surface mount with screw-down flange | — |
| Polarity / Channel | N-Channel enhancement-mode lateral | — |
| Modulation Support | W-CDMA, LTE, multi-carrier GSM | — |
| Application | CDMA / cellular base station RF power amplifier | W-CDMA / LTE / TD-SCDMA base-station PA |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Part Number | — | MRF8P20160HSR3 |
| Technology | — | HV8 lateral RF MOSFET |
| Frequency Band | — | 1880 MHz to 2025 MHz |
| Output Power (Average) | — | 37 W (Single-Carrier W-CDMA) |
| Drain Supply Voltage (VDD) | — | 28 Vdc |
| Quiescent Drain Current (IDQA) | — | 550 mA |
| Power Gain (Typ) | — | 16.5 dB at 1.92 GHz |
| Kemasan / Case | — | NI-780S-4 (ceramic flanged) |
| Gaya Pemasangan | — | Screw-down flange (through-hole) |
| Junction Temperature (Max) | — | 200 C (S-prefix sample-tested) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |