MRF8P20161HSR3 vs MRF8P20160HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P20161HSR3 sa pamamagitan ng NXP Semiconductors at MRF8P20160HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP
MRF8P20161HSR3 ✓ NakahandaNXP Semiconductors
MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP
MRF8P20160HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P20161HSR3 | MRF8P20160HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Uri ng Transistor | N-Channel Lateral MOSFET (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1880 MHz to 2025 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V | — |
| Average Output Power | 37 W (W-CDMA) | — |
| Small-Signal Gain | 16.4 dB at 1.92 GHz | — |
| Quiescent Drain Current (Idq) | 550 mA | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Packhaging | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount | — |
| Uri ng Pagpapasok | Surface mount with screw-down flange | — |
| Polarity / Channel | N-Channel enhancement-mode lateral | — |
| Modulation Support | W-CDMA, LTE, multi-carrier GSM | — |
| Application | CDMA / cellular base station RF power amplifier | W-CDMA / LTE / TD-SCDMA base-station PA |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Part Number | — | MRF8P20160HSR3 |
| Technology | — | HV8 lateral RF MOSFET |
| Frequency Band | — | 1880 MHz to 2025 MHz |
| Output Power (Average) | — | 37 W (Single-Carrier W-CDMA) |
| Drain Supply Voltage (VDD) | — | 28 Vdc |
| Quiescent Drain Current (IDQA) | — | 550 mA |
| Power Gain (Typ) | — | 16.5 dB at 1.92 GHz |
| Packhaging / Kaso | — | NI-780S-4 (ceramic flanged) |
| Style ng Pagpapasok | — | Screw-down flange (through-hole) |
| Junction Temperature (Max) | — | 200 C (S-prefix sample-tested) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |