MRF8P20161HSR3 vs MRF8P20160HSR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF8P20161HSR3 tarafından NXP Semiconductors ve MRF8P20160HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF8P20161HSR3 | MRF8P20160HSR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Transistor Türü | N-Channel Lateral MOSFET (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1880 MHz to 2025 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V | — |
| Average Output Power | 37 W (W-CDMA) | — |
| Small-Signal Gain | 16.4 dB at 1.92 GHz | — |
| Quiescent Drain Current (Idq) | 550 mA | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Paket | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount | — |
| Montaj Türü | Surface mount with screw-down flange | — |
| Polarity / Channel | N-Channel enhancement-mode lateral | — |
| Modulation Support | W-CDMA, LTE, multi-carrier GSM | — |
| Application | CDMA / cellular base station RF power amplifier | W-CDMA / LTE / TD-SCDMA base-station PA |
| RoHS Durumu | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Part Number | — | MRF8P20160HSR3 |
| Technology | — | HV8 lateral RF MOSFET |
| Frequency Band | — | 1880 MHz to 2025 MHz |
| Output Power (Average) | — | 37 W (Single-Carrier W-CDMA) |
| Drain Supply Voltage (VDD) | — | 28 Vdc |
| Quiescent Drain Current (IDQA) | — | 550 mA |
| Power Gain (Typ) | — | 16.5 dB at 1.92 GHz |
| Paket / Kas | — | NI-780S-4 (ceramic flanged) |
| Montaj Stili | — | Screw-down flange (through-hole) |
| Junction Temperature (Max) | — | 200 C (S-prefix sample-tested) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |