MT40A512M16LY-062E-ATE vs K4A8G165WC-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16LY-062E-ATE disebabkan oleh Micron Technology dan K4A8G165WC-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MT40A512M16LY-062E-ATE | K4A8G165WC-BCTD |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 512M x 16 | 512M x16 |
| Kadar Data | 3200 MT/s (DDR4-3200) | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.6 GHz | 1.333 GHz |
| Access Time | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Supply Voltage (VPP) | 2.5 V | — |
| Kemasan | 96-ball FBGA (7.5 x 13.5 mm) | 96FBGA |
| Ball Pitch | 0.8 mm | — |
| Suhu Operasi | -40C to +105C (automotive) | 0C to +95C |
| Speed Grade | -062E (0.625 ns tCK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| On-Die Termination | Yes (ODT) | Dynamic ODT |
| ZQ Calibration | Yes | Yes |
| Data Mask | Yes (DM) | Yes (x16 DM) |
| Refresh Mode | Auto self-refresh | — |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Generation | — | C-die (1Y nm-class process) |
| CRC Function | — | Yes (write CRC) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |