MT41K256M16HA-15EM:E vs H5TC4G63MFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16HA-15EM:E disebabkan oleh Micron Technology dan H5TC4G63MFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ AktifPengandingan Spesifikasi
| Parametr | MT41K256M16HA-15EM:E | H5TC4G63MFR-PBA |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.5V compatible) | — |
| Kadar Data | 1333 Mbps (DDR3L-1333) | 1866 Mbps (PC3L-14900) |
| Latensi CAS | 15 | — |
| Kemasan | 96-ball FBGA (9x14mm) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Bilangan Pin | 96 | — |
| Access Time | 13.75 ns | — |
| Clock Frequency | 800 MHz | — |
| Antaramuka | Parallel | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |