MT41K256M16HA-15EM:E vs H5TC4G63MFR-PBA 比較
詳細並排比較 MT41K256M16HA-15EM:E 由 Micron Technology 與 H5TC4G63MFR-PBA 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ 啟用中規格比較
| 參數 | MT41K256M16HA-15EM:E | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35 V (1.5V compatible) | — |
| 資料速率 | 1333 Mbps (DDR3L-1333) | 1866 Mbps (PC3L-14900) |
| CAS 延遲 | 15 | — |
| 封裝 | 96-ball FBGA (9x14mm) | 96-ball FBGA |
| 安裝類型 | Surface Mount | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| 腳位數 | 96 | — |
| Access Time | 13.75 ns | — |
| Clock Frequency | 800 MHz | — |
| 介面 | Parallel | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |