NT5AD512M16C4-JR vs K4A8G165WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5AD512M16C4-JR disebabkan oleh Nanya Technology dan K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | NT5AD512M16C4-JR | K4A8G165WC-BCRC |
|---|---|---|
| Merek | Nanya Technology | Samsung Electro-Mechanics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | $73.75 | $19.69 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Organisasi | 512M x16 | 512M x 16 |
| Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kadar Data | 1.6 GHz (DDR4-3200) | 2400 Mbps |
| Kemasan | TFBGA-96 | 96-FBGA (TFBGA) |
| Gambaran Suhu Operasi | 0°C to +95°C | — |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 8 Gbit |
| Clock Frequency | — | 1333 MHz |
| Tegangan Pemberi Arus | — | 1.2 V (1.14 V to 1.26 V) |
| Antaramuka | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Suhu Operasi | — | 0 C to +95 C |
| Jenis Pemasangan | — | Surface Mount |
| Ciri-ciri | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |
| Status RoHS | — | Compliant |