NT5AD512M16C4-JR vs K4A8G165WC-BCRC 比較
詳細並排比較 NT5AD512M16C4-JR 由 Nanya Technology 與 K4A8G165WC-BCRC 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ 啟用中規格比較
| 參數 | NT5AD512M16C4-JR | K4A8G165WC-BCRC |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electro-Mechanics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | $73.75 | $19.69 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 組織 | 512M x16 | 512M x 16 |
| Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 資料速率 | 1.6 GHz (DDR4-3200) | 2400 Mbps |
| 封裝 | TFBGA-96 | 96-FBGA (TFBGA) |
| 工作溫度範圍 | 0°C to +95°C | — |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| 記憶體容量 | — | 8 Gbit |
| Clock Frequency | — | 1333 MHz |
| 供應電壓 | — | 1.2 V (1.14 V to 1.26 V) |
| 介面 | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| 工作溫度 | — | 0 C to +95 C |
| 安裝類型 | — | Surface Mount |
| 功能特色 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |
| RoHS 狀態 | — | Compliant |