STW45NM50 vs IPP600N25N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci STW45NM50 disebabkan oleh STMicroelectronics dan IPP600N25N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | STW45NM50 | IPP600N25N3GXKSA1 |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $9.55 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 500 V | — |
| Continuous Drain Current (ID) at 25°C | 45 A | — |
| Continuous Drain Current (ID) at 100°C | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.09 ohm | — |
| Gate Charge (Qg) | 120 nC | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| Power Dissipation (PD) | 450 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55C to +175C (junction) |
| Kemasan | TO-247 | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Kemasan / Case | — | TO-220-3 (PG-TO220-3-1) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |