STW45NM50 vs IPP600N25N3GXKSA1 比較
詳細並排比較 STW45NM50 由 STMicroelectronics 與 IPP600N25N3GXKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ 啟用中
規格比較
| 參數 | STW45NM50 | IPP600N25N3GXKSA1 |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $9.55 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 500 V | — |
| Continuous Drain Current (ID) at 25°C | 45 A | — |
| Continuous Drain Current (ID) at 100°C | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.09 ohm | — |
| Gate Charge (Qg) | 120 nC | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| Power Dissipation (PD) | 450 W | — |
| 工作溫度範圍 | -55°C to +150°C | -55C to +175C (junction) |
| 封裝 | TO-247 | — |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant | — |
| 無鹵素 | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | — | 250 V |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 封裝 / 外殼 | — | TO-220-3 (PG-TO220-3-1) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| 腳位數 | — | 3 (Gate, Drain, Source) |