TJ60S06M3LT6L1.NQ vs TJ60S06M3L(T6L1NQ Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci TJ60S06M3LT6L1.NQ disebabkan oleh Toshiba dan TJ60S06M3L(T6L1NQ disebabkan oleh Toshiba. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktifPengandingan Spesifikasi
| Parametr | TJ60S06M3LT6L1.NQ | TJ60S06M3L(T6L1NQ |
|---|---|---|
| Merek | Toshiba | Toshiba |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF typ |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | DPAK+ (TO-252) | DPAK+ (TO-252-3) |
| Suhu Operasi | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | Silicon U-MOS (trench) |
| Aras MSL | 1 (unlimited) | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Jenis Transistor | — | P-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | — | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | — | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | — | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Leakage Current (IDSS) Max | — | -10 uA (VDS = -40 V) |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |