TJ60S06M3LT6L1.NQ vs TJ60S06M3L(T6L1NQ Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng TJ60S06M3LT6L1.NQ sa pamamagitan ng Toshiba at TJ60S06M3L(T6L1NQ sa pamamagitan ng Toshiba. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ NakahandaPagsanggunian na paghahambing
| Parametro | TJ60S06M3LT6L1.NQ | TJ60S06M3L(T6L1NQ |
|---|---|---|
| Brand | Toshiba | Toshiba |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF typ |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | DPAK+ (TO-252) | DPAK+ (TO-252-3) |
| Temperature na Operasyon | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | Silicon U-MOS (trench) |
| Level ng MSL | 1 (unlimited) | — |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Uri ng Transistor | — | P-Channel MOSFET |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | — | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | — | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | — | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Leakage Current (IDSS) Max | — | -10 uA (VDS = -40 V) |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 |