ULN2003ADR vs TBD62503AFNG Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ULN2003ADR disebabkan oleh Texas Instruments dan TBD62503AFNG disebabkan oleh Toshiba. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
ULN2003ADR ULN2003ADR - 50V 500mA 7-ch Darlington Array SOIC-16 | TI

ULN2003ADR - 50V 500mA 7-ch Darlington Array SOIC-16 | TI

ULN2003ADR ✓ Aktif

Pengandingan Spesifikasi

Parametr ULN2003ADR TBD62503AFNG
Merek Texas Instruments Toshiba
Kategori Transistors Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor 7 NPN Darlington Array —
Number of Channels 7 7
Collector Current (Single Output, Max) 500 mA —
Collector-Emitter Voltage (Max) 50 V —
Output Breakdown Voltage (Min) 50 V —
Input Type Logic-level compatible (TTL/CMOS) —
Series Base Resistor 2.7 kOhm —
Konfigurasi Output Open-collector, common emitter —
Clamp Diodes Integrated common-cathode flyback diodes —
DC Input Voltage (Min) [DATA_NEEDED: minimum input logic-high voltage] —
Gambaran Suhu Operasi -40 C to +70 C -40 C to +85 C
Kemasan SOIC-16 (D) SSOP-16
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant (per distributor listings)
Lead-Free Yes —
Channel Type — Sink-type (low-side switch)
Output Device — N-channel DMOS open-drain
Maximum Drain-Source Voltage (Vdss) — 50 V
Continuous Output Current (per channel) — 300 mA
Peak Output Current — 500 mA
Maximum Clamping Diode Voltage — 50 V
Logic Input Compatibility — 3V CMOS / TTL
On-Resistance (Ron) — [DATA_NEEDED: typical Ron at specified Vgs]
Input Voltage (Vin) — 0 V to 30 V (gate drive, low-voltage logic supply)
Process Technology — Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic

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