ULN2003ADR vs TBD62503AFNG 比較
詳細並排比較 ULN2003ADR 由 Texas Instruments 與 TBD62503AFNG 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ULN2003ADR | TBD62503AFNG |
|---|---|---|
| 品牌 | Texas Instruments | Toshiba |
| 類別 | Transistors | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | 7 NPN Darlington Array | — |
| Number of Channels | 7 | 7 |
| Collector Current (Single Output, Max) | 500 mA | — |
| Collector-Emitter Voltage (Max) | 50 V | — |
| Output Breakdown Voltage (Min) | 50 V | — |
| Input Type | Logic-level compatible (TTL/CMOS) | — |
| Series Base Resistor | 2.7 kOhm | — |
| 輸出配置 | Open-collector, common emitter | — |
| Clamp Diodes | Integrated common-cathode flyback diodes | — |
| DC Input Voltage (Min) | [DATA_NEEDED: minimum input logic-high voltage] | — |
| 工作溫度範圍 | -40 C to +70 C | -40 C to +85 C |
| 封裝 | SOIC-16 (D) | SSOP-16 |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant (per distributor listings) |
| Lead-Free | Yes | — |
| Channel Type | — | Sink-type (low-side switch) |
| Output Device | — | N-channel DMOS open-drain |
| Maximum Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Output Current (per channel) | — | 300 mA |
| Peak Output Current | — | 500 mA |
| Maximum Clamping Diode Voltage | — | 50 V |
| Logic Input Compatibility | — | 3V CMOS / TTL |
| On-Resistance (Ron) | — | [DATA_NEEDED: typical Ron at specified Vgs] |
| Input Voltage (Vin) | — | 0 V to 30 V (gate drive, low-voltage logic supply) |
| Process Technology | — | Toshiba BiCD (Bipolar + CMOS + DMOS) monolithic |