2EDF7275KXUMA1 - Dual 4A/8A Isolated Gate Driver | Infineon
MPN: 2EDF7275KXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
2EDF7275KXUMA1 Overview
A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, FPGA) and the gate of a power MOSFET, IGBT, SiC MOSFET, or GaN HEMT, providing the high peak current and voltage swing required to charge and discharge the device's gate capacitance quickly. Isolated gate drivers add a galvanic barrier between the low-voltage control domain and the high-voltage power stage, protecting the controller from high dv/dt transients and allowing it to drive switches that float at hundreds of volts above ground. The 2EDi family is positioned as a compact, fast, robust solution for medium- to high-voltage power conversion.
Key features of the 2EDF7275K include 4 A source / 8 A sink peak gate-drive current for fast switching transitions, 37 ns propagation delay for tight timing control, and 150 V/ns common-mode transient immunity (CMTI) for reliable operation in noisy half-bridge environments. Independent high-side and low-side outputs allow direct drive of half-bridge or bootstrap-driven topologies, while the integrated dead-time and shoot-through protection improve system reliability. The PG-TFLGA-13-1 package offers a small footprint suitable for high-density power designs.
Architecturally, the 2EDF7275K uses coreless transformer isolation rather than optocoupler or capacitive isolation, achieving high CMTI, low propagation delay, and small package size. The internal SLDO (slave LDO) regulates the secondary-side supply through an external resistor RVDDI from VDD, simplifying PCB design by eliminating the need for an isolated bias supply IC on the secondary side.
Typical applications include DC-DC converters, half-bridge and full-bridge power stages, motor drives, solar inverters, and industrial SMPS. It is particularly well suited for driving medium- to high-voltage MOSFETs in compact, isolated power topologies where switching speed and noise immunity are critical.
When designing with this part, place bypass capacitors close to VDDI/VDD pins and keep the gate-drive loop area minimal to preserve CMTI margin. Verify the bootstrap capacitor refresh at minimum duty cycle to prevent high-side UVLO in continuous PWM operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Drop-in alternatives for 2EDF7275KXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDF7275KXUMA1 (same form factor and footprint) — differing in Package, Product Type, Number of Outputs, Peak Sink Current, Peak Source Current.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EDS7275KXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
2EDB7259KXUMA1
✅ Drop-In✓ In Stock
$1.22 / Unit
View Datasheet →2EDL8033G4CXTMA1
✅ Drop-In✓ In Stock
$2.84 / Unit
View Datasheet →2EDL8034G4CXTMA1
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →2EDR8258XXUMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →2EDS8165H4FXTMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
2EDF7275KXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Dual-channel isolated gate driver IC |
| Topology | High-side / Low-side half-bridge, non-inverting |
| Number of Outputs | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Propagation Delay (typ) | 37 ns |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Isolation Type | Functional isolation via coreless transformer (CT) |
| Package | PG-TFLGA-13-1 |
| Pin Count | 13 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 °C to +125 °C |
| RoHS Status | Compliant |
| Lead-Free | Yes |
2EDF7275KXUMA1 Pin Configuration
| Pin 1 | IN+ — Non-inverting logic input (channel 1) |
| Pin 2 | IN- — Inverting logic input / enable (channel 1) |
| Pin 3 | VDD — Primary-side supply voltage |
| Pin 4 | GNDI — Primary-side (input) ground reference |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | VDDI — Secondary-side supply (regulated by internal SLDO via RVDDI) |
| Pin 7 | GNDO — Secondary-side (output) ground reference |
| Pin 8 | OUTL — Low-side gate-drive output |
| Pin 9 | OUTH — High-side gate-drive output |
| Pin 10 | VB — High-side bootstrap supply |
| Pin 11 | VS — High-side floating supply return / bootstrap reference |
| Pin 12 | FLT — Fault output (active low, open-drain) |
| Pin 13 | SLDON — SLDO enable (tie to GNDO for normal operation) |
Typical Applications
2EDF7275KXUMA1 is suitable for 7 applications: Isolated DC-DC Converters, Motor Drives and Inverters, Solar Inverters and Renewable Energy, Industrial SMPS and Welding Power, Server and Telecom Power Supplies, EV On-Board Chargers and DC Wallboxes, Uninterruptible Power Supplies (UPS).
Isolated DC-DC Converters
The 2EDF7275KXUMA1 is ideal for driving the primary-side MOSFETs in isolated half-bridge and full-bridge DC-DC converters used in telecom and server power supplies. Its 4 A source / 8 A sink peak current rapidly charges MOSFET gate capacitance, reducing switching losses at high PWM frequencies, while the 150 V/ns CMTI tolerates the large dv/dt transients generated by the primary-side switching node. The coreless-transformer isolation eliminates the bulky optocoupler + isolated bias supply typically required, shrinking the BOM. Compared to discrete gate-drive optocouplers, the 2EDF7275K integrates two channels in a single 13-pin TFLGA, halving PCB area and reducing propagation delay mismatch between high-side and low-side channels. The internal SLDO, fed via an external RVDDI resistor from the VDD rail, further simplifies the secondary-side bias design. Designers should use the 2EDF7275K with 600 V to 1 200 V-class MOSFETs or SiC switches where fast, isolated drive is required.
Recommended
Motor Drives and Inverters
In industrial motor-drive inverters, the 2EDF7275KXUMA1 drives the high-side and low-side IGBTs or MOSFETs of each phase leg with the timing precision needed for sinusoidal PWM. The 37 ns propagation delay keeps the dead-time short, minimizing torque ripple and switching losses, while the 8 A sink current quickly discharges the gate for crisp turn-off and reduced short-circuit risk. Functional isolation per IEC 60747-17 protects the low-voltage MCU from the DC bus voltage, which can reach 400 V or 800 V in industrial drives. The compact PG-TFLGA-13-1 package supports high-density inverter designs where multiple driver channels must fit on a small PCB. The 2EDF7275K is well paired with 600 V/650 V IGBT modules or 1 200 V SiC modules used in servo drives and traction inverters, and the integrated dead-time and shoot-through protection improve system safety.
Recommended
Solar Inverters and Renewable Energy
Solar string inverters and energy-storage power-conversion systems rely on high-voltage half-bridge stages that demand robust isolated gate drivers, making the 2EDF7275KXUMA1 a strong fit. The 150 V/ns CMTI rating tolerates the high dv/dt of 1 200 V IGBTs and SiC MOSFETs in the boost and H4/H5 inverter stages, while the 4 A/8 A peak drive accelerates switching at high frequency to maximize efficiency. Functional isolation per IEC 60747-17 allows the MCU to safely control the high-voltage stage, and the 13-pin TFLGA package supports the compact, fan-cooled inverter designs favored in residential PV. Compared to gate-drive optocouplers, the 2EDF7275K integrates two channels, reducing component count and improving reliability through fewer solder joints. Designers should pair it with 1 200 V SiC MOSFETs in the H-bridge and use the SLDO to power the secondary side directly from the bootstrap supply.
Recommended
Industrial SMPS and Welding Power
Switch-mode power supplies for industrial automation and welding equipment use the 2EDF7275KXUMA1 to drive the primary-side MOSFETs of phase-shifted full-bridge and hard-switched half-bridge converters. The 4 A source / 8 A sink peak current handles the high Qg of high-current MOSFETs, supporting switching frequencies of 100 kHz to 500 kHz with manageable switching losses. The 150 V/ns CMTI rating rejects the large common-mode noise inherent to phase-shifted topologies, preventing false triggering of the high-side output. The coreless-transformer isolation is more compact and reliable than optocoupler-based drive, and the 13-pin TFLGA package enables dense layouts on multi-kW power modules. Engineers should use the 2EDF7275K with 600 V to 1 200 V MOSFETs or SiC switches and provide adequate copper pour for thermal dissipation under continuous PWM operation.
Recommended
Server and Telecom Power Supplies
48 V-input server and telecom power supplies use the 2EDF7275KXUMA1 to drive the primary-side switches of LLC and phase-shifted full-bridge converters feeding 12 V, 5 V, and PoE rails. The 4 A source / 8 A sink peak current supports high-Qg MOSFETs used at 600 V to 1 200 V, while the 150 V/ns CMTI tolerates the high dv/dt of SiC switches. The 37 ns low propagation delay enables precise timing in digital-control loops, where tight duty-cycle control is essential for regulation accuracy. The 13-pin TFLGA package supports the high-density, forced-air-cooled designs typical in 1U/2U server PSUs, and the integrated SLDO simplifies the secondary-side bias. Compared to gate-drive optocouplers, the 2EDF7275K halves the BOM count and improves long-term reliability under thermal-cycling stress.
Recommended
EV On-Board Chargers and DC Wallboxes
On-board chargers (OBC) and DC fast-charging wallboxes operate from 400 V or 800 V bus voltages and require isolated gate drivers for the PFC and LLC stages, where the 2EDF7275KXUMA1 is well suited. The 4 A/8 A peak drive current supports high-Qg SiC MOSFETs used in 22 kW to 50 kW OBC designs, while the 150 V/ns CMTI rating handles the fast dv/dt of SiC and the EMI-rich environment of EV power electronics. Functional isolation per IEC 60747-17 plus reinforced isolation when paired with the 2EDS7275K variant supports the safety isolation levels required by IEC 61851. The compact 13-pin TFLGA package allows the high-density layout required to fit multiple isolated channels in a small enclosure, and the wide -40 °C to +125 °C operating range covers automotive underhood thermal profiles. Engineers should pair the 2EDF7275K with 1 200 V SiC MOSFETs in the PFC and DC-DC stages and use the SLDO to power the secondary-side bias directly.
Recommended
Uninterruptible Power Supplies (UPS)
Online UPS systems use double-conversion topologies where the 2EDF7275KXUMA1 drives the PFC IGBTs and the inverter IGBTs, providing fast and isolated switching for both stages. The 4 A/8 A peak current and 37 ns delay allow high-frequency PWM at 20-50 kHz for low audible noise and high efficiency, while the 150 V/ns CMTI rating rejects the dv/dt generated by paralleled IGBT modules in the inverter leg. Functional isolation per IEC 60747-17 isolates the DSP controller from the 400 V DC bus, and the 13-pin TFLGA package fits the dense control boards used in 1 kVA to 10 kVA rack-mounted UPS products. The integrated SLDO eliminates the need for an isolated bias supply, reducing BOM cost and PCB area. Designers should pair the 2EDF7275K with 600 V or 1 200 V IGBTs and ensure the bootstrap capacitor refresh is properly sized for the minimum duty cycle.
Recommended
Recommended Products Summary
Engineering reference data for 2EDF7275KXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDS7275KXUMA1 | 2EDB7259KXUMA1 | 2EDL8033G4CXTMA1 | 2EDL8034G4CXTMA1 | 2EDR8258XXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TFLGA-13-1 | PG-TFLGA-13-1 | PG-TFLGA-13-1 | PG-TFLGA-13-1 | PG-TFLGA-13-1 | PG-TFLGA-13-1 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Peak Source Current | 4 A | 4 A | 4 A | 3 A (-25%) | 3 A (-25%) | 4 A |
| Peak Sink Current | 8 A | 8 A | 8 A | 6 A (-25%) | 6 A (-25%) | 8 A |
| Propagation Delay (typ) | 37 ns | 37 ns | 37 ns | 40 ns (+8%) | 40 ns (+8%) | 37 ns |
| CMTI | 150 V/ns | 150 V/ns | 150 V/ns | 150 V/ns | 150 V/ns | 150 V/ns |
| Isolation Type | Functional (coreless transformer) | Reinforced (coreless transformer) | Functional (coreless transformer) | Functional (coreless transformer) | Functional (coreless transformer) | Reinforced (coreless transformer) |
| Topology | Half-bridge (HS/LS, non-inverting) | Half-bridge (HS/LS, non-inverting) | Bootstrap high-side only | Half-bridge (HS/LS) | Half-bridge (HS/LS) | Dual reinforced half-bridge |
Key Differentiators
- Higher peak sink current (8 A) than most same-family alternatives (vs 2EDL8033G4CXTMA1)
- Functional isolation vs reinforced isolation (application-specific choice) (vs 2EDS7275KXUMA1)
- True half-bridge topology vs bootstrap-only high-side (vs 2EDB7259KXUMA1)
Design Notes
Place the VDDI bypass capacitor (1 µF X7R minimum) within 2 mm of the VDDI pin to minimize high-frequency noise on the secondary-side supply. The VDD primary-side capacitor should also be placed close to the VDD pin. Keep the gate-drive output traces short and wide (≥ 0.5 mm) to limit parasitic inductance, which directly affects switching losses and ringing at the gate of the driven MOSFET or IGBT.
Minimize the area of the high-current switching loop between the OUTL/OUTH output, the gate of the driven switch, and the GNDO return. A small loop area reduces radiated EMI and prevents false triggering of the high-side channel by dv/dt-induced displacement currents. For half-bridge layouts, place the bootstrap capacitor and diode near the VB and VS pins to ensure reliable high-side supply refresh under minimum duty-cycle conditions.
Do not exceed the absolute maximum VDD rating of 20 V; a small TVS or Zener clamp is recommended for robustness against supply transients. The SLDON pin must be tied to GNDO for normal operation; leaving it floating disables the internal SLDO and prevents the secondary-side driver from functioning. Always verify the bootstrap capacitor refresh at the minimum PWM duty cycle to prevent high-side UVLO during continuous low-duty operation.
The PG-TFLGA-13-1 package relies on the PCB copper pour for thermal dissipation. At full 4 A/8 A peak switching with continuous PWM at high frequency, attach at least 100 mm² of copper pour on both top and bottom layers directly beneath the exposed pad. Without adequate copper, the junction temperature can rise rapidly and trigger thermal shutdown under sustained load.
Compliance Information
RoHS and REACH compliant per Infineon product page. Functional isolation only - not AEC-Q100 qualified; for automotive designs, contact Infineon for reinforced-isolation AEC-Q100 variants. Coreless transformer isolation technology per IEC 60747-17.
