BSC014N04LS - 40V 1.4mOhm N-Ch OptiMOS 5 MOSFET | Infineon
MPN: BSC014N04LS β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.47 | $0.47 |
| 10 | $0.44 | $4.40 |
| 100 | $0.41 | $41.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.35 | $350.00 |
BSC014N04LS Overview
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the component hierarchy, the BSC014N04LS belongs to the transistor family, specifically the N-channel enhancement-mode MOSFET class, which sits under power semiconductors and power management. These devices are the workhorses of DC-DC converters, motor drives, and load switches because they combine very low conduction loss with fast switching.
Key features of the BSC014N04LS include industry-leading low RDS(on) of 1.4 mOhm max, which minimizes conduction losses (I2R) in high-current paths; a maximum drain current of 198 A at case temperature per datasheet conditions; and OptiMOS 5 thin-wafer technology, which Infineon states delivers 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices. The low gate charge also reduces gate-drive losses in fast-switching topologies.
Technically, the device uses Infineon advanced thin-wafer OptiMOS 5 process technology, optimizing the trade-off between specific on-resistance and switching charge. The TDSON-8FL package with exposed drain pads provides excellent thermal performance: the datasheet thermal rating assumes mounting on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm2 of one-layer, 70 um copper for the drain connection. Absolute maximum ratings are specified at 25 C case temperature, and de-rating applies at higher case temperatures per the datasheet derating diagrams.
Typical applications include synchronous rectification in server VRM and telecom DC-DC converters, high-current load switches, motor drive half-bridges, and battery-powered power paths operating from 12 V or 24 V rails, where ultra-low conduction loss and compact footprint are decisive.
Design consideration: at 198 A-class currents, PCB copper area and busbar design dominate thermal behavior; verify RDS(on) at your actual gate-drive voltage and junction temperature, since 1.4 mOhm is a 25 C, 10 V VGS maximum figure.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for BSC014N04LS β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC014N04LS (same form factor and footprint) β differing in Package, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSC014N04LSI
β Drop-Inπ Reference alternative (not in catalog)
BSC014N04LSIATMA1
β Drop-Inβ In Stock
$0.39 / Unit
View Datasheet βBSC010N04LS
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BSC016N04LS
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
VBL1151N
β Drop-Inπ Reference alternative (not in catalog)
BSC014N04LS Maximum Ratings & Electrical Characteristics
| Polarity | N-channel |
| Technology | OptiMOS 5 |
| VDS Max | 40 V |
| RDS(on) Max | 1.4 mOhm |
| ID Max | 198 A |
| Package | SuperSO8 5x6 (TDSON-8FL) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C |
| Configuration | Single MOSFET |
| Absolute Max Rating Condition | TC = 25C, de-rating required above |
| Thermal Test Condition | 40 mm x 40 mm x 1.5 mm FR4, 6 cm2 70 um copper drain area |
BSC014N04LS Pin Configuration
| Pin 1 | Source β Source connection (joined with pins 2, 3, 5, 6, 7, 8) |
| Pin 2 | Source β Source connection |
| Pin 3 | Source β Source connection |
| Pin 4 | Gate β Gate drive input |
| Pin 5 | Source β Source connection |
| Pin 6 | Source β Source connection |
| Pin 7 | Source β Source connection |
| Pin 8 | Source β Source connection |
Typical Applications
BSC014N04LS is suitable for 6 applications: Server VRM Synchronous Rectification, Telecom DC-DC Converters, Motor Drives, Battery Power Path and Load Switches, Solar and MPPT Power Conversion, Test and Measurement Power Supplies.
Server VRM Synchronous Rectification
In server voltage regulator modules (VRMs) converting 12 V input to sub-1 V core rails, the BSC014N04LS serves as the synchronous rectifier (low-side) FET. Its 1.4 mOhm maximum RDS(on) directly minimizes conduction loss, which dominates at the hundreds-of-amps phase currents typical of multiphase server VRMs. Infineon states the OptiMOS 5 family achieves 31 percent lower RDS(on) x Qg than alternative devices, so the part also keeps switching transition losses low at the 500 kHz to 1 MHz phase frequencies common in datacenter power. The TDSON-8FL exposed-drain package enables dense multiphase layouts with direct copper pour heat spreading.
Recommended
Telecom DC-DC Converters
Telecom rectifiers and intermediate bus converters run from -48 V battery plants with 12 V and 24 V derived rails, where the BSC014N04LS 40 V rating provides margin on 24 V buses and its 1.4 mOhm RDS(on) reduces conduction loss in secondary-side synchronous rectification. Efficiency directly translates to heat in sealed telecom enclosures, so the OptiMOS 5 low FOM matters: every milliohm saved reduces I2R heating at 30-60 A outputs. The -55C to +150C junction range supports outdoor cabinet environments, and the industry-standard SO-8 footprint allows reuse of existing rectifier layouts without PCB redesign.
Recommended
Motor Drives
Brushed DC and brushless DC motor drive half-bridges on 12 V and 24 V rails benefit from the BSC014N04LS combination of 40 V breakdown, 1.4 mOhm on-resistance, and fast OptiMOS 5 switching. In PWM-driven bridges, conduction loss (I2 x RDS(on)) and switching loss both contribute to thermal budget; the 31 percent lower FOM claimed by Infineon reduces total loss versus older-generation alternatives. For stalled-rotor or peak-torque events, the high pulsed current capability of the die and the robust TDSON-8FL package absorb short overloads. Gate-drive resistors should be selected to balance EMI against switching loss in motor drive layouts.
Recommended
Battery Power Path and Load Switches
Battery-powered systems, including power tools, e-mobility packs, and UPS backplanes, use the BSC014N04LS as a high-side or back-to-back load switch on 12-24 V packs. Its 1.4 mOhm max RDS(on) keeps switch drop minimal - at 50 A the device drops only about 70 mV and dissipates roughly 3.5 W - preserving runtime and avoiding extra cooling. The 40 V rating tolerates pack transients, and the low gate charge permits fast, controlled turn-on to limit inrush. The -55C to +150C junction range suits engine-bay and outdoor battery compartments when the SI temperature-grade variant is selected.
Recommended
Solar and MPPT Power Conversion
Solar charge controllers and MPPT converters switching 12 V and 24 V panel arrays use the BSC014N04LS in synchronous buck topologies. Here the 40 V VDS rating covers panel open-circuit transients on 12 V systems, while the ultra-low 1.4 mOhm RDS(on) maximizes conversion efficiency at the 30-80 A currents typical of larger charge controllers - each percent of efficiency gained is harvest energy gained around the clock. The OptiMOS 5 low gate charge reduces drive losses in continuous high-frequency PWM operation, and the SO-8 compatible footprint supports compact, conformal-coated outdoor controller PCBs.
Recommended
Test and Measurement Power Supplies
Programmable DC electronic loads and laboratory power supplies employ the BSC014N04LS as the linear or switched current-control element. In electronic loads, the low 1.4 mOhm RDS(on) allows sinking tens of amps with minimal self-heating at low source voltages, extending the valid operating range of the load. The device 40 V rating covers common bench supply buses, and the predictable OptiMOS 5 transfer characteristics simplify closed-loop current control. Designers must operate within the datasheet SOA when using the FET in linear mode, since linear operation imposes die thermal constraints beyond switching-mode limits.
Recommended
Recommended Products Summary
Engineering reference data for BSC014N04LS β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LSI | BSC010N04LS | BSC016N04LS | VBL1151N |
|---|---|---|---|---|---|
| Package | SuperSO8 5x6 (TDSON-8FL) | SuperSO8 5x6 (TDSON-8FL) - same | SuperSO8 5x6 (TDSON-8FL) - same | SuperSO8 5x6 (TDSON-8FL) - same | SuperSO8 5x6 (TDSON-8FL) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Will Semiconductor |
| RDS(on) Max | 1.4 mOhm | 1.4 mOhm | ~1.0 mOhm (lower) | ~1.6 mOhm (higher) | matched to 1.4 mOhm (per comparison article) |
| Primary Use Case | High-current synchronous rectification | Industrial/extended temperature | Maximum efficiency, lowest conduction loss | Cost-optimized moderate current | Domestic supply chain alternative |
Key Differentiators
- Lower figure of merit than competing devices (vs VBL1151N)
- Higher current rating than domestic alternative (vs VBL1151N)
- Industrial temperature grade available in same footprint (vs BSC014N04LSI)
Design Notes
The 198 A rating of the BSC014N04LS applies only at TC = 25 C per datasheet footnote; real PCB-mounted current capability is set by copper area. The datasheet thermal condition assumes a 40 mm x 40 mm x 1.5 mm FR4 board with 6 cm2 of one-layer 70 um copper on the drain connection. Estimated: at 40 A continuous with hot RDS(on) of about 2 mOhm, conduction dissipation is roughly 3.2 W, which requires full exposed-pad solder coverage, multiple thermal vias to inner copper planes, and ideally airflow. Verify junction temperature with the datasheet derating diagrams for your board.
Connect the exposed drain pad on the bottom of the TDSON-8FL package to a solid copper pour - it is both the electrical drain and the primary heat-removal path. All six source pins should be tied into the source pour with multiple vias. Keep the gate loop (driver to pin 4, return via source) short and compact to limit parasitic inductance; a long gate loop causes gate ringing and spurious turn-on at high di/dt. Place a low-ESR ceramic capacitor close to the drain-source loop for switching transients.
RDS(on) of 1.4 mOhm is a 25 C maximum at high gate voltage; at realistic junction temperatures expect roughly 1.5-1.8x that value, so size conduction-loss budgets accordingly. Also confirm the gate-drive voltage is within the specified RDS(on) test conditions - under-driving the gate raises RDS(on) substantially. Absolute maximum ratings require de-rating above 25 C case temperature per datasheet Diagram 2. When substituting drop-in alternatives, compare gate charge and switching FOM, not just RDS(on), since switching loss can dominate at high frequency.
OptiMOS 5 devices switch fast, and the low gate charge of the BSC014N04LS enables high di/dt and dv/dt edges that can radiate. In sensitive designs, add a small gate resistor (estimated 2-10 Ohm range, tune empirically) to control edge rates, and consider a Miller-clamp or negative gate bias in bridge topologies to prevent dv/dt-induced turn-on of the complementary device. A pull-down resistor of 10 kOhm from gate to source keeps the FET off during controller startup or fault states.
Compliance Information
Compliance status not stated in the provided verified web data; Infineon OptiMOS 5 parts are generally RoHS compliant per manufacturer product pages, but this must be confirmed on the official Infineon product page before design-in.
