FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi
MPN: FDP86363-F085 ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.1 | $2.10 |
| 10 | $1.89 | $18.90 |
| 100 | $1.62 | $162.00 |
| 500 | $1.41 | $705.00 |
| 1,000 | $1.18 | $1,180.00 |
FDP86363-F085 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify and switch electronic signals. Power MOSFETs like the FDP86363-F085 sit in the power-discrete hierarchy as: power MOSFET -> discrete-semi -> power semiconductor -> discrete component. The PowerTrench process refers to onsemi's proprietary shielded-gate trench technology that reduces Rds(on) per unit silicon area, enabling high current handling in compact through-hole packages.
Key features of the FDP86363-F085 include 2.8 mOhm typical Rds(on) at Vgs=10V, 80V drain-source breakdown voltage (V(BR)DSS), 110A continuous drain current at 25C case temperature, and an avalanche-rated single-pulse drain current of 240A. The TO-220AB package provides a low 0.5C/W junction-to-case thermal resistance, allowing direct heatsink mounting for high-power applications. The device is qualified to AEC-Q101 for automotive use, making it suitable for 12V/24V vehicle electrical systems.
Typical applications include 12V/24V automotive ECU power switching, brushed and brushless DC motor drivers, synchronous-rectifier stages in isolated DC-DC converters, solenoid and relay drivers, and industrial high-current load switches. The combination of low Rds(on), high peak current handling, and AEC-Q101 qualification makes it ideal for harsh-environment automotive subsystems such as electric power steering, transmission control, and battery management.
When designing with the FDP86363-F085, ensure the gate-drive voltage reaches 10V for advertised Rds(on) performance. Use a gate resistor (10-100 ohm) to limit ringing, and provide proper heatsinking for continuous high-power operation. The avalanche rating requires careful snubber design in inductive switching applications.
This page synthesizes distributor pricing, drop-in same-package and cross-brand alternatives, and practical design notes not found in the manufacturer datasheet. Specifications verified against the onsemi FDP86363-F085 datasheet Rev. 4 (May-2024).
Drop-in alternatives for FDP86363-F085 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with FDP86363-F085 (same form factor and footprint) — differing in Continuous Drain Current (ID) at TC=25C, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
FDP86363_F085
✅ Drop-In📋 Reference alternative (not in catalog)
FDB86363-F085
✅ Drop-In📋 Reference alternative (not in catalog)
FDBL86363-F085
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IRFB3607
✅ Drop-In📋 Reference alternative (not in catalog)
VBM1803
✅ Drop-In📋 Reference alternative (not in catalog)
FDP86363-F085 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (V(BR)DSS) | 80 V |
| Continuous Drain Current (ID) at TC=25C | 110 A |
| On-Resistance Rds(on) at Vgs=10V | 2.8 mOhm typical |
| Power Dissipation (PD) at TC=25C | 300 W |
| Junction-to-Case Thermal Resistance RthetaJC | 0.5 C/W |
| Junction-to-Ambient Thermal Resistance RthetaJA | 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet) |
| Operating Junction Temperature Range | -55C to +175C |
| Package Type | TO-220-3 (TO-220AB) |
| Mounting Type | Through Hole |
| Polarity / Channel Type | N-Channel |
| Technology | PowerTrench (shielded-gate trench) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
FDP86363-F085 Pin Configuration
| Pin 1 | Gate (G) — MOSFET gate input - drive to Vgs=10V for rated Rds(on); do not exceed Vgs(max)=20V |
| Pin 2 | Drain (D) — MOSFET drain - electrically bonded to the metal tab; primary power terminal |
| Pin 3 | Source (S) — MOSFET source - power return path; connect to circuit ground reference |
Safe Operating Area - FDP86363-F085 (TO-220AB, TC=25C)
Typical Applications
FDP86363-F085 is suitable for 6 applications: 12V/24V Automotive ECU Load Switching, Brushed DC Motor Driver (Low-Side Switch), Synchronous Rectifier in Isolated DC-DC Converters, Solenoid and Relay Driver Replacement, Battery Management High-Side Disconnect, Industrial High-Current Load Switch.
12V/24V Automotive ECU Load Switching
The FDP86363-F085's 80V V(BR)DSS provides substantial transient headroom above 24V load-dump transients in 12V/24V vehicle electrical systems, while its 110A continuous current handles high-current ECU loads. AEC-Q101 automotive qualification makes it compliant with vehicle EMC, vibration, and temperature requirements. Use as a low-side switch for headlamp modules, fuel pumps, and cooling fans, with a 10-ohm gate resistor to suppress ringing. The 2.8 mOhm typical Rds(on) keeps conduction loss below 5W at 30A, allowing PCB copper-area heatsinking without a discrete heatsink.
Recommended
Brushed DC Motor Driver (Low-Side Switch)
The FDP86363-F085 serves as a low-side switch in brushed DC motor drives such as seat adjusters, window lifters, and windshield wiper motors. Its 2.8 mOhm Rds(on) reduces I2R conduction loss during PWM operation, and 110A continuous current covers peak motor stall currents up to 80A. Use a freewheeling diode across the motor to suppress back-EMF transients at turn-off; the TO-220AB tab provides direct chassis heatsinking. Compared to smaller DPAK MOSFETs, FDP86363-F085 offers 4x current handling in the same through-hole footprint, simplifying PCB layout for high-torque motor channels.
Recommended
Synchronous Rectifier in Isolated DC-DC Converters
The FDP86363-F085's low 2.8 mOhm Rds(on) makes it ideal as the synchronous-rectifier MOSFET in forward converters and half-bridge topologies supplying 12V/24V industrial buses from 48V telecom rails. Its 80V rating covers the rectified 48V rail with margin for transients, and the PowerTrench shielded-gate technology gives low Qrr and Qg for high-frequency switching up to 200 kHz. The TO-220AB package bolts directly to the chassis or an aluminum substrate, providing RthetaJC of 0.5 C/W for excellent thermal performance.
Recommended
Solenoid and Relay Driver Replacement
The FDP86363-F085 replaces electromechanical relays in automotive junction boxes and industrial solenoid drivers, eliminating mechanical wear. Its 110A continuous and 240A pulse avalanche rating covers solenoid inrush currents, while AEC-Q101 qualification tolerates underhood thermal environments. Add a flyback diode across inductive loads and a TVS clamp across drain-source to protect against demagnetization transients that can exceed 100V. The TO-220AB footprint matches existing relay-driver PCB layouts, enabling drop-in solid-state relay upgrades.
Recommended
Battery Management High-Side Disconnect
In 48V mild-hybrid battery management systems (BMS), the FDP86363-F085 functions as a high-current disconnect switch between the battery pack and traction inverter. Its 80V V(BR)DSS comfortably covers the 48V nominal rail plus transient spikes up to 60V. Low 2.8 mOhm Rds(on) keeps continuous conduction loss below 1W at 20A, eliminating the need for paralleling devices. The PowerTrench technology offers fast switching for 100us disconnect response during fault detection.
Recommended
Industrial High-Current Load Switch
For industrial 24V/48V PLC I/O modules and high-current power-distribution switches, the FDP86363-F085 provides 110A switching capability in the industry-standard TO-220AB footprint. Its 80V rating covers industrial transients per IEC 61000-4-x surge requirements with margin. Mount the tab to a chassis or DIN-rail heatsink via an insulated thermal interface. The AEC-Q101 auto-grade stress testing provides higher reliability margin than commercial-only MOSFETs, reducing field-failure rates in industrial installations.
Recommended
Recommended Products Summary
Engineering reference data for FDP86363-F085 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | FDP86363_F085 | FDB86363-F085 | FDBL86363-F085 | IRFB3207 | IRFB3607 | VBM1803 |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | Infineon | Infineon | VBsemi |
| Package | TO-220-3 (TO-220AB) | TO-220-3 (TO-220AB) - same | D2PAK - surface-mount, verify land pattern | H-PSOF - surface-mount, verify land pattern | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage V(BR)DSS | 80 V | 80 V | 80 V | 80 V | 75 V (-6%) | 75 V (-6%) | 80 V |
| Continuous Drain Current ID at TC=25C | 110 A | 110 A | 110 A | 240 A | 260 A | 80 A (-27%) | 75 A (-32%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial (verify auto-grade variant) | Industrial | Commercial |
| Technology | PowerTrench (shielded-gate trench) | PowerTrench (shielded-gate trench) | PowerTrench | PowerTrench | HEXFET | HEXFET | Trench |
Key Differentiators
- AEC-Q101 automotive qualification with 110A continuous rating (vs VBM1803)
- PowerTrench technology with low Qrr for high-frequency switching (vs IRFB3607)
- Same die across FDP/FDB/FDBL package options (vs FDBL86363-F085)
Design Notes
At continuous drain current of 80A with Rds(on)=2.8 mOhm, the FDP86363-F085 dissipates approximately P=I^2*R=80^2*0.0028=17.9W. Estimated: with RthetaJC=0.5 C/W and Tj(max)=175C, the case-to-ambient thermal budget is 175-25-17.9*0.5=141C rise allowance, requiring a heatsink with RthetaSA<=7.4 C/W for safe operation. A 100x100x25mm aluminum extrusion or 10 square inches of 2oz copper PCB area provides this dissipation. For continuous operation above 50A, force-air cooling is recommended.
Keep the gate-drive loop (gate resistor to gate pin to source pin) as small as possible - aim for <1 cm loop area to minimize parasitic inductance that causes gate ringing. Place a 100kohm pull-down resistor from gate to source to ensure the MOSFET stays off during MCU power-up. For switching frequencies above 50 kHz, add a ferrite bead in series with the gate resistor and keep the drain-source snubber capacitor within 5mm of the drain tab.
Do not exceed Vgs(max)=+/-20V - typical gate-drive voltages of 10V are safe, but transients from gate-driver parasitic inductance can overshoot. Add a 10V Zener diode from gate to source as protection. Do not operate above the published single-pulse avalanche rating; design switching transitions to stay below the avalanche energy limit. Verify proper heatsink isolation when the drain tab is electrically hot - use a silicone thermal pad and shoulder washer to prevent short circuits to chassis ground.
The PowerTrench process of FDP86363-F085 has low Qrr (reverse-recovery charge), reducing turn-on loss in synchronous-rectifier topologies. For high-frequency switching above 100 kHz, the low Qg reduces gate-drive losses. Add a 1nF-10nF ceramic bypass capacitor from Vcc of the gate driver to within 5mm of the driver IC. Use a four-layer PCB with continuous ground plane beneath the switching loop to minimize radiated EMI.
Compliance Information
RoHS and REACH compliant per onsemi product page. AEC-Q101 automotive qualification verified. Lead-free (Pb-free) packaging standard for TO-220 parts. Halogen-free status not explicitly stated in the verified web data - set to unknown. onsemi is a participant in the Responsible Minerals Initiative.
