IKW75N60TFKSA1 - 600V 75A TRENCHSTOP IGBT3 | Infineon
MPN: IKW75N60TFKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.2 | $10.20 |
| 10 | $9.18 | $91.80 |
| 100 | $8.16 | $816.00 |
| 500 | $7.35 | $3,675.00 |
| 1,000 | $6.63 | $6,630.00 |
IKW75N60TFKSA1 Overview
An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the low conduction loss of a bipolar junction transistor with the voltage-driven gate of a MOSFET. It belongs to the broader class of power discrete transistors, sitting hierarchically between simple MOSFETs (used at lower voltages) and higher-voltage thyristors (used in HVDC and traction). The IGBT dominates 400 V to 1200 V hard-switching applications such as motor drives, uninterruptible power supplies, solar inverters, and induction heating because it offers the best trade-off between conduction loss, switching speed, and ease of gate drive.
Key features of the IKW75N60TFKSA1 include a low VCE(sat) for reduced conduction loss, fast switching with low Eon/Eoff, short-circuit ruggedness, and an integrated anti-parallel emitter-recovery diode. The TO-247 package provides a robust mechanical footprint with a metal tab for direct heatsink mounting. The integrated diode eliminates the need for an external freewheeling diode in most bridge topologies, simplifying layout and reducing BOM cost.
Architecturally, the IKW75N60TFKSA1 uses Infineon's third-generation TRENCHSTOP cell design, where vertical trenches etched into the silicon surface confine the conducting channel and reduce on-state losses. The field-stop layer controls the electric field during turn-off, allowing a thinner drift region and lower saturation voltage than non-punch-through (NPT) designs of the same voltage class. The co-packaged EmCon (emitter-controlled) diode is rated for the full 75 A and is optimized to minimize reverse-recovery losses in hard-switched bridge legs.
Typical applications include three-phase motor drives for industrial automation, solar string inverters, uninterruptible power supplies (UPS), induction cooking, welding inverters, and switched-mode power supplies with PFC boost stages. The wide SOA and short-circuit tolerance make it particularly well suited to industrial motor drives where repetitive hard-switching events and fault robustness are required.
When designing with this part, ensure the gate driver can source and sink at least 1 A peak to charge the input capacitance quickly, and use a negative gate-emitter turn-off bias (typically -8 V to -15 V) to prevent dv/dt-induced false turn-on in bridge configurations. The 428 W power dissipation figure assumes TC=25 Β°C; in real systems at TC=100 Β°C the usable dissipation drops to roughly 215 W, so heatsink sizing is essential.
Drop-in alternatives for IKW75N60TFKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IKW75N60T
β Drop-Inπ Reference alternative (not in catalog)
IKW50N60T
β Drop-Inπ Reference alternative (not in catalog)
IKW75N60H3
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
STGW75H60DFB
β Drop-Inπ Reference alternative (not in catalog)
FGH75N60SMD
β Drop-Inπ Reference alternative (not in catalog)
IKW75N60TFKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC, TC=100 Β°C) | 75 A |
| Gate-Emitter Voltage (VGES) | Β±20 V |
| Maximum Power Dissipation (Ptot) | 428 W |
| Integrated Free-Wheeling Diode | Yes, full-rated anti-parallel |
| Package | PG-TO247-3-1 (TO-247-3-1) |
| Mounting Type | Through Hole |
| Operating Junction Temperature | -40 Β°C to +150 Β°C |
| Technology | Trench Field Stop |
| Diode Reverse Recovery | Soft recovery, co-packaged |
| RoHS Status | Compliant |
IKW75N60TFKSA1 Pin Configuration
| Pin 1 | Gate β Gate control input; drive with +15 V on, -8 to -15 V off |
| Pin 2 | Collector β Main current terminal connected to high-voltage DC bus |
| Pin 3 | Emitter β Main current return terminal; connect to gate-driver return |
| Pin TAB | Collector (tab) β Metal tab electrically connected to collector; mechanically mounted to heatsink |
Typical Applications
IKW75N60TFKSA1 is suitable for 8 applications: Three-Phase Industrial Motor Drive, Solar String Inverter, Uninterruptible Power Supply (UPS), Induction Heating Cooktop, Welding Inverter, Switched-Mode Power Supply with PFC, Electric Vehicle Charging Station, Industrial Induction Cooker / Heating Furnace.
Three-Phase Industrial Motor Drive
The IKW75N60TFKSA1 is widely used in the inverter stage of three-phase variable-frequency drives (VFDs) for industrial motors in the 22 kW to 55 kW range. Its 600 V VCES rating comfortably covers the rectified 380-480 V AC bus with adequate derating margin, and the 75 A continuous current handles motors drawing 50-65 A per phase. The co-packaged freewheeling diode simplifies the six-pack inverter layout, while the TRENCHSTOP IGBT3 cell design reduces conduction losses by 15-20% versus previous-generation NPT parts, directly cutting heatsink size and total BOM cost.
Recommended
Solar String Inverter
In residential and small-commercial string inverters, the IKW75N60TFKSA1 forms the H-bridge or HERIC topology switches on the AC side and the boost-stage switch on the DC side. At a typical 600 V DC bus and 16-20 kHz switching frequency, the part's soft-recovery EmCon diode keeps EMI manageable while the 600 V rating allows headroom for transient overvoltages from the grid. The 75 A current rating supports single-phase inverters up to about 10 kW and three-phase units in the 15-25 kW class, all in a TO-247 footprint that simplifies heatsink mechanical design across product variants.
Recommended
Uninterruptible Power Supply (UPS)
Online double-conversion UPS systems in the 5-20 kVA range use the IKW75N60TFKSA1 in the inverter bridge that converts the battery DC bus into clean AC output. The part's 600 V blocking voltage is well matched to the typical 384-400 V battery bus after discharge, and the 75 A rating supports single-phase UPS units up to 15 kVA with adequate thermal margin. The integrated freewheeling diode and TRENCHSTOP switching characteristics deliver >97% inverter efficiency, reducing battery drain during grid outages and extending runtime for connected loads.
Recommended
Induction Heating Cooktop
Resonant half-bridge induction-heating cooktops operating at 20-50 kHz benefit from the IKW75N60TFKSA1's TRENCHSTOP IGBT3 switching speed and ruggedness. In a series-resonant LC tank driving the induction coil, the IGBT sees repetitive hard commutation events at high current, where the part's low Eoff and integrated freewheeling diode keep thermal stress within ratings. The TO-247 package mounts directly to the cooktop's aluminum heatsink, providing consistent thermal performance across appliance production batches.
Recommended
Welding Inverter
Inverter-based MIG/MMA/TIG welders use the IKW75N60TFKSA1 in the secondary-side full-bridge that converts rectified mains into the high-frequency AC driving the welding transformer. The 600 V VCES handles 3-phase 380 V or single-phase 230 V input after rectification, while the 75 A current rating supports welding currents up to ~250 A with adequate duty cycle. The TRENCHSTOP IGBT3 technology delivers the short-circuit-withstand capability critical for arc strikes, and the integrated diode eliminates an external component that would otherwise need to be rated for the same stress.
Recommended
Switched-Mode Power Supply with PFC
In 3-10 kW telecom and industrial SMPS units, the IKW75N60TFKSA1 serves as the main switch in the totem-pole or bridgeless PFC boost stage operating from a 400 V DC bus. At 70-100 kHz switching frequency the part still operates efficiently thanks to its low Eon/Eoff, while the integrated diode supports the bi-directional current flow inherent to bridgeless topologies. The TO-247-3-1 package accepts standard spring-clip or screw-mount heatsink assemblies, easing assembly in high-volume SMPS production.
Recommended
Electric Vehicle Charging Station
Level 2 AC EV chargers and DC fast-charging modules rated 20-50 kW use the IKW75N60TFKSA1 in the PFC boost and/or isolated DC-DC stages. The 600 V/75 A ratings support the typical 400 V traction battery bus with paralleled IGBTs for higher power levels, and the integrated diode reduces inverter complexity. Infineon's TRENCHSTOP family has a long track record in EV power-electronics applications, providing the reliability and second-source availability demanded by automotive-grade charging infrastructure designs.
Recommended
Industrial Induction Cooker / Heating Furnace
Industrial RF heating furnaces and commercial induction cookers use the IKW75N60TFKSA1 in higher-power resonant tank circuits operating at 8-30 kHz. The part's robust short-circuit withstand time and integrated EmCon diode withstand the repetitive high-current commutation events typical of induction-heating tank circuits. The TO-247 package can be liquid-cooled via cold-plate mounting, enabling continuous operation at powers well above 30 kW per IGBT position in industrial furnace applications.
Recommended
Recommended Products Summary
Engineering reference data for IKW75N60TFKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKW75N60T | IKW50N60T | IKW75N60H3 | STGW75H60DFB | FGH75N60SMD |
|---|---|---|---|---|---|---|
| Package | PG-TO247-3-1 (TO-247) | PG-TO247-3-1 - same | PG-TO247-3-1 - same | PG-TO247-3-1 - same | TO-247 - same | TO-247 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (TC=100 Β°C) | 75 A | 75 A | 50 A | 75 A | 75 A | 75 A |
| Integrated Freewheeling Diode | Yes (full-rated EmCon) | Yes | Yes | Yes | Yes | Yes |
| Technology | Trench Field Stop IGBT3 | Trench Field Stop IGBT3 | Trench Field Stop IGBT3 | Trench Field Stop IGBT3 (HighSpeed) | STPower HB Series | Field Stop II |
| Typical Application Target | Hard-switching motor drive, UPS, solar | Hard-switching drive, same as target | Lower-current drives | High-frequency resonant switching | Induction heating, motor drive | UPS, solar, motor drive |
Key Differentiators
- TRENCHSTOP IGBT3 technology for 15-20% lower VCE(sat) vs prior NPT generations (vs FGH75N60SMD)
- Lower IC = 75 A at TC=100 Β°C vs lower-rated alternative (vs IKW50N60T)
- Pin-compatible with multiple cross-brand suppliers (vs STGW75H60DFB)
Design Notes
Estimated: at VCES=600 V, IC=75 A, and TC=100 Β°C, the maximum continuous power dissipation is approximately 215 W (vs the 428 W rating at TC=25 Β°C). In a hard-switching motor drive at 50% duty cycle and 20 kHz switching, total losses are dominated by conduction; a heatsink with Rth(sa) below 0.15 Β°C/W is required to keep Tj under 150 Β°C. Apply a thin layer of thermal compound (TIM) between the TO-247 tab and the heatsink and use a torque-limited screw (typically 0.6-0.8 NΒ·m) to avoid cracking the package.
Keep the gate-emitter loop as physically small as possible to minimize parasitic inductance; a 20 nH loop combined with 50 nC of gate charge and 10 Ξ© gate resistance can produce voltage overshoots above 4 V on the gate, risking parasitic turn-on. Use a dedicated gate-driver return trace directly from pin 3 to the driver COM pin, rather than sharing the high-current emitter path. Place the gate-drive decoupling capacitor (1 Β΅F ceramic + 100 nF ceramic) within 5 mm of the gate-emitter pins.
Do not operate the IKW75N60TFKSA1 above its 600 V VCES rating, even transiently; inductive switching transients on the DC bus can easily exceed the rating if the DC-link capacitor is undersized or the snubber is missing. Always use a negative gate-emitter bias (-8 V minimum, -15 V recommended) when the part is used in a half-bridge configuration to prevent dv/dt-induced Miller turn-on. Avoid paralleling multiple IGBTs without derating to 70-80% of rated current each, as VCE(sat) matching between parts is limited.
The integrated anti-parallel EmCon diode eliminates the need for an external freewheeling diode in most bridge topologies. However, in hard-switched circuits with high reverse-recovery stress (e.g., high di/dt above 1000 A/Β΅s), verify that the diode's trr and Qrr are within the design margin; otherwise, add a small saturable inductor in series with the collector to slow di/dt during turn-on and reduce reverse-recovery losses in the complementary IGBT.
Compliance Information
RoHS compliant and Pb-free per Infineon product page. Not AEC-Q100 qualified - this is a discrete industrial-grade IGBT; for automotive applications contact Infineon about the automotive-grade equivalent.
