IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon
MPN: IPD60R600P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.41 | $14.10 |
| 100 | $1.18 | $118.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.82 | $820.00 |
| 2,500 | $0.71 | $1,775.00 |
Drop-in alternatives for IPD60R600P7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD60R600P7
✅ Drop-In📋 Reference alternative (not in catalog)
IPL60R060CFD7AUMA1
✅ Drop-In✓ In Stock
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View Datasheet →IPD60R210PFD7SAUMA1
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View Datasheet →IPD60R600P7ATMA1 Maximum Ratings & Electrical Characteristics
| Part Number | IPD60R600P7ATMA1 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET |
| Technology | Superjunction (SJ) / CoolMOS |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, TC) | 6 A |
| On-Resistance (RDS(on)) | 490 mOhm (max) |
| Power Dissipation (PD, TC) | 30 W |
| Operating Temperature Range | -55C to +150C (TJ) |
| Package / Case | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Generation | CoolMOS 7th generation (P7, successor to P6) |
| Ordering Code Suffix | ATMA1 = Tape & Reel, 13-inch |
IPD60R600P7ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; 0 V off, 10 V typical full enhancement |
| Pin 2 | Drain (D) — Drain current / high-voltage terminal |
| Pin 3 | Source (S) — Source / reference ground for gate drive |
| Pin Tab | Drain (D) — Metal tab also connected to Drain - use as heatsink thermal path |
Safe Operating Area (DC, TO-252)
Typical Applications
IPD60R600P7ATMA1 is suitable for 6 applications: Switch-Mode Power Supply (SMPS) PFC Front Stage, Flyback Auxiliary Power Supply, LED Lighting Ballasts and Drivers, Solar Micro-Inverter / String Inverter Front Stage, Industrial Power Tools and Appliance Drives, Universal-Input USB-PD Adapters and Chargers.
Switch-Mode Power Supply (SMPS) PFC Front Stage
The IPD60R600P7ATMA1 is engineered for the 600 V PFC front stage of offline SMPS designs. With 600 V VDS it sits on a 400 V rectified bus with adequate transient margin, and 490 mOhm RDS(on) at 6 A keeps conduction loss manageable. The CoolMOS P7 superjunction structure reduces switching loss versus planar 600 V parts, allowing higher switching frequency (65-130 kHz) and smaller magnetics. The integrated gate protection Zener simplifies the gate-driver circuit. Compared with P6 series, P7 lowers ringing tendency and EMI emission, easing PFC-stage filter design and improving converter efficiency by 0.5-1.0 percentage points. Recommended companion: ICE2QR0680Z quasi-resonant PWM controller.
Recommended
Flyback Auxiliary Power Supply
The IPD60R600P7ATMA1 fits 5-30 W auxiliary flyback converters in white goods, industrial controllers, and standby supplies. At 600 V VDS the part tolerates 264 VAC universal-input rectified peaks up to 374 V. The 490 mOhm RDS(on) and 6 A peak current rating support transformer designs up to ~30 W continuous with proper snubber design. The CoolMOS P7 family is especially attractive for quasi-resonant flyback because its low Qg allows valley-switching detection with simple auxiliary winding. Reduced EMI compared to P6 helps meet EN55022 Class B limits in compact adapters.
Recommended
LED Lighting Ballasts and Drivers
The IPD60R600P7ATMA1 is well suited for commercial and industrial LED driver front stages operating at 100-277 VAC input. The PG-TO252-3 (DPAK) package allows a clip-mount heatsink with low RthJA, supporting 30 W dissipation in confined fixtures. The integrated body diode and CoolMOS P7 EMI behavior simplify the input bridge+PFC+flyback topology. LED drivers using this MOSFET benefit from a 600 V avalanche rating that withstands inductive kickback and line-surge events. The TO-252 footprint is industry standard for through-hole-style LED ballast designs that have transitioned to surface mount.
Recommended
Solar Micro-Inverter / String Inverter Front Stage
For 600 V-class micro-inverter front-end boost PFC stages, the IPD60R600P7ATMA1 provides the voltage headroom needed for solar input surges and inductive ringing from the boost inductor. Its CoolMOS P7 technology reduces total harmonic distortion (THD) of the input current by enabling higher switching frequencies with lower switching losses. The 6 A continuous rating supports micro-inverters in the 200-500 W range per phase. Engineers appreciate the predictable body-diode recovery for synchronous rectification compatibility, easing full-bridge inverter design downstream.
Recommended
Industrial Power Tools and Appliance Drives
Variable-speed drives for industrial pumps, fans, and small appliances benefit from the IPD60R600P7ATMA1 in the 600 V PFC and inverter sections. With 6 A continuous current and 30 W dissipation, it supports drives up to ~1.5 kW with proper heatsinking. The CoolMOS P7 series gives an excellent trade-off between RDS(on) and switching loss, which matters for hard-switched inverter stages running at 16-20 kHz. Surface-mount TO-252 allows automated assembly versus traditional TO-220 hand-soldering on a production line.
Recommended
Universal-Input USB-PD Adapters and Chargers
Modern USB Power Delivery (PD) adapters from 45 W to 100 W use the IPD60R600P7ATMA1 in the PFC and primary-side flyback or LLC stages. The 600 V breakdown supports universal 90-264 VAC input, while the CoolMOS P7 platform's low Qg enables high-frequency operation for compact magnetics. The exposed TO-252 tab mates with small clip heatsinks inside slim adapter housings. As USB-PD adoption expands, this MOSFET's combination of low conduction loss and EMI-friendly switching makes it a strong choice for high-density charger designs.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R600P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R600P7 | IPL60R060CFD7AUMA1 | IPW60R080P7XKSA1 | IPD60R210PFD7SAUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | TO-247 - different (not drop-in) | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| On-Resistance (RDS(on)) | 490 mOhm max | 490 mOhm max | 60 mOhm (much lower) | 80 mOhm | 210 mOhm |
| Continuous Drain Current (ID) | 6 A (TC) | 6 A (TC) | 31 A (TC) | 60 A (TC) | 11.7 A (TC) |
| Technology / Series | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS CFD7 | CoolMOS P7 | CoolMOS PFD7 |
| Power Dissipation (PD) | 30 W | 30 W | 100 W | 151 W | 78 W |
| Packing Code Suffix | ATMA1 = Tape & Reel 13-inch | No suffix = Tray | AUMA1 = Tape & Reel | XKSA1 = Tube | SAUMA1 = Tape & Reel |
Key Differentiators
- CoolMOS P7 platform with integrated gate protection Zener (vs IPD60R360P7 (P6 series same footprint))
- Lower ringing tendency than P6 (vs CoolMOS P6 (e.g. IPD60R600C6))
- Lower RDS(on) than older 600 V planar MOSFETs (vs Planar 600V MOSFET (e.g. IRFPC60LC))
- Available in surface-mount TO-252 versus legacy through-hole TO-220 (vs Old TO-220 600V parts (e.g. IRFBC30))
Design Notes
The PG-TO252-3 (DPAK) package has a junction-to-ambient thermal resistance (RthJA) of approximately 62 C/W on a 1 sq inch 2-oz copper pad. At full 6 A drain current and 30 W power dissipation, junction temperature would exceed ratings without a clip-mount heatsink. Estimated: at 25C ambient, a 30 W dissipation produces a 93 C junction rise above the tab temperature, which is acceptable for 100 C tab operation but requires derating for continuous use. Always compute the RthJA from the specific PCB footprint rather than the datasheet's minimum-copper number.
Keep the gate-drive loop area under 1 sq cm by placing the gate resistor and bootstrap capacitor directly between gate pin and source pin, with the gate-drive return on the source pin (not on the PCB ground plane, which carries power current). The exposed drain tab should be soldered to a copper pad large enough to carry both electrical and thermal load - a star-ground layout is preferred to avoid coupling switching noise into the gate drive. Add a 10-ohm gate series resistor to dampen ringing in TO-252 parasitic inductance.
Do not exceed VGS = +/-20 V absolute maximum; the integrated gate protection Zener limits to approximately +/-15 V. Use a 10-12 V gate drive, never 15 V from a poorly regulated bootstrap supply. Do not parallel IPD60R600P7ATMA1 without derating by 30% due to RDS(on) mismatch - or use matched parts from the same date code. Avoid connecting a snubber across drain-source that would otherwise slow the switching edge: the CoolMOS P7 family has fast body-diode recovery, and an RC snubber is preferred over an RCD.
CoolMOS P7 reduces but does not eliminate switching ringing. Add a small ferrite bead in series with the drain, and use a Y-capacitor across the isolation barrier of any offline SMPS to meet EN55022 Class B conducted EMI. The very low Qg of the P7 platform allows the use of a smaller gate resistor (10-22 ohm) without slowing the switching edge, which in turn reduces high-frequency EMI harmonics above 30 MHz.
Compliance Information
RoHS compliant per Infineon product page. MSL-1 per JEDEC J-STD-020. Not AEC-Q100 qualified (industrial grade only - use automotive-grade version if needed).
