IR1168STRPBF - 200V Dual Smart SR Controller 8-SOIC | Infineon
MPN: IR1168STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.91 | $3.91 |
| 10 | $3.52 | $35.20 |
| 100 | $3.12 | $312.00 |
| 500 | $2.74 | $1,370.00 |
| 1,000 | $2.38 | $2,380.00 |
IR1168STRPBF Overview
A synchronous rectifier controller (SR controller) is a type of secondary-side power supply controller that replaces traditional Schottky diodes with low-RDS(on) MOSFETs to dramatically reduce conduction losses and improve overall efficiency. SR controllers sit within the broader power management IC hierarchy (PMIC -> power supply controller -> secondary-side controller -> synchronous rectifier driver) and are essential building blocks for high-efficiency isolated DC-DC converters used in adapters, servers, telecom rectifiers, and industrial SMPS.
Key differentiating features include the dual-channel architecture that drives two rectifiers from a single IC, a wide VCC operating range of 8.6V to 18V with internal UVLO, 200V drain-to-source sensing capability for direct connection to the rectifier MOSFET drains, and 4A peak gate turn-off current that eliminates the body-diode conduction period to maximize efficiency. The integrated anti-bounce logic prevents false triggering caused by PCB parasitics and MOSFET ringing.
Technically, the IR1168STRPBF uses a proprietary high-voltage IC process that integrates 200V-rated sensing transistors alongside low-voltage control logic on the same die, allowing direct sensing of the drain-to-source voltage of each rectifier MOSFET without external level-shifting circuitry. The internal state machine detects when the MOSFET channel is conducting (forward current flow) and turns the gate on, then detects the body-diode conduction and turns the gate off just before the next commutation cycle, minimizing dead time and reverse recovery losses.
Typical applications include resonant half-bridge LLC converters for high-efficiency adapters, telecom and server silver-box / rectifiers, industrial SMPS modules, and any isolated DC-DC topology where two low-side rectifiers are used on the secondary side. Compared to discrete Schottky rectifiers, the IR1168STRPBF-based solution typically delivers 1-3% efficiency improvement at full load, particularly in 200W-2kW power ranges.
When designing with this device, careful attention must be paid to the gate drive loop layout to minimize parasitic inductance, and the drain-to-source sensing pin connections must be kept short and direct to the MOSFET to avoid false triggering from noise. The 8-pin SOIC package provides adequate thermal performance for typical rectifier applications where gate charge losses dominate rather than IC conduction losses.
This page synthesizes distributor pricing, drop-in same-package alternatives, design notes and resonant converter application context not found in the manufacturer datasheet alone.
Drop-in alternatives for IR1168STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR1168STRPBF (same form factor and footprint) β differing in Operating Temperature Range, Package.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR1168SPBF
β Drop-Inπ Reference alternative (not in catalog)
NCP4306DADG
β Drop-Inπ Reference alternative (not in catalog)
NCP4306DADR2G
β Drop-Inπ Reference alternative (not in catalog)
SRK2001D
β Drop-Inπ Reference alternative (not in catalog)
SRK2001D-TR
β Drop-Inπ Reference alternative (not in catalog)
IR1168STRPBF Maximum Ratings & Electrical Characteristics
| Part Number | IR1168STRPBF |
| Manufacturer | Infineon Technologies |
| Description | Dual Smart Secondary-Side High Speed SR Controller |
| Topology | Resonant half-bridge (LLC, series resonant) |
| Number of Channels | 2 (dual) |
| Drain-Source Sensing Voltage | 200 V (max) |
| VCC Operating Range | 8.6 V to 18 V |
| Maximum Switching Frequency | 500 kHz |
| Peak Turn-Off Drive Current | 4 A |
| Output Current (per channel) | 1 A |
| UVLO Protection | Yes (internal) |
| Anti-Bounce Logic | Yes (internal) |
| Operating Temperature Range | -40 C to +125 C |
| Package | 8-SOIC (NB) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IR1168STRPBF Pin Configuration
| Pin 1 | SOURCE1 β Channel 1 source / sense return for MOSFET 1 |
| Pin 2 | DRAIN1 β Channel 1 drain sense (200V max) |
| Pin 3 | GATE1 β Channel 1 gate drive output |
| Pin 4 | GND β Ground |
| Pin 5 | GATE2 β Channel 2 gate drive output |
| Pin 6 | DRAIN2 β Channel 2 drain sense (200V max) |
| Pin 7 | SOURCE2 β Channel 2 source / sense return for MOSFET 2 |
| Pin 8 | VCC β Supply voltage (8.6V to 18V) |
Typical Applications
IR1168STRPBF is suitable for 6 applications: LLC Resonant Half-Bridge Converter (Server / Telecom), High-Density Laptop and Gaming Adapter, Industrial SMPS Module (24V / 48V Output), LED Driver Power Stage (>200W), Datacenter 48V Intermediate Bus Converter, Solar Microinverter DC-DC Stage.
LLC Resonant Half-Bridge Converter (Server / Telecom)
The IR1168STRPBF drives the two low-side synchronous rectifier MOSFETs on the secondary side of an LLC resonant half-bridge, the dominant topology for 1-3 kW server and telecom silver-box power supplies. Its 200V drain-source sensing rating directly handles the rectified output of 48V-input LLC stages, while the 500 kHz maximum switching frequency supports high-density magnetics. The 4A peak turn-off drive eliminates body-diode conduction between commutation cycles, and anti-bounce logic prevents false triggering from PCB parasitic ringing, delivering 1-3% efficiency improvement over Schottky rectifiers.
Recommended
High-Density Laptop and Gaming Adapter
In 100-240W laptop adapters and gaming laptop power bricks, the IR1168STRPBF enables >94% efficiency by replacing Schottky rectifiers with low-RDS(on) MOSFETs in the resonant flyback or LLC output stage. The dual-channel design drives both halves of the synchronous rectifier pair from a single IC, saving PCB area and BOM cost. Its 200V sensing handles universal-input rectified outputs (up to ~150V DC), and the SOIC-8 package suits the slim profile of modern Type-C adapters.
Recommended
Industrial SMPS Module (24V / 48V Output)
Industrial 24V and 48V power supplies with isolated DC-DC stages benefit from the IR1168STRPBF's secondary-side synchronous rectification to achieve high efficiency at heavy loads. The 8-SOIC package and wide -40C to +125C operating range handle harsh industrial environments, while the internal UVLO simplifies start-up sequencing. Typical designs achieve 92-95% efficiency at full load, reducing heatsink size in DIN-rail or chassis-mount supplies.
Recommended
LED Driver Power Stage (>200W)
High-power LED drivers (>200W) for horticultural lighting, stadium lighting and street lighting use resonant half-bridge topologies where the IR1168STRPBF drives the secondary-side synchronous rectifiers to maximize efficiency and minimize heatsinking. The 4A peak turn-off drive handles large MOSFETs with high gate charge, while the 200V drain rating supports 200V-class PFC outputs directly. This enables smaller form factors for IP67 outdoor luminaires.
Recommended
Datacenter 48V Intermediate Bus Converter
Datacenter 48V-to-POL intermediate bus converters (IBC) using LLC or series-resonant topologies employ the IR1168STRPBF on the secondary side for highest efficiency at the 48V bus. The dual-channel driver integrates the synchronous rectification for the transformer's two secondary windings in a single IC, reducing BOM count. According to Infineon's IR1168 family datasheet, this configuration is the standard solution for 48V bus architectures powering downstream PoL regulators.
Recommended
Solar Microinverter DC-DC Stage
Solar microinverters (300W-600W class) require high-efficiency isolated DC-DC stages to convert the panel's variable DC voltage to a grid-suitable output. The IR1168STRPBF drives the synchronous rectifiers in the resonant DC-DC stage, achieving >96% peak efficiency. Its wide operating temperature range and surface-mount SOIC-8 package suit the thermally-constrained IP67 enclosure of rooftop microinverters, and its 200V drain sensing handles 80V Voc strings with adequate margin.
Recommended
Recommended Products Summary
Engineering reference data for IR1168STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR1168SPBF | NCP4306DADG | SRK2001D |
|---|---|---|---|---|
| Brand | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | 8-SOIC (NB) | 8-SOIC (NB) - same | 8-SOIC (NB) - same | 8-SO (NB) - same |
| Number of Channels | 2 (dual) | 2 (dual) | 2 (dual) | 2 (dual) |
| Drain-Sense Voltage (max) | 200 V | 200 V | ~100 V | 200 V |
| VCC Operating Range | 8.6 V to 18 V | 8.6 V to 18 V | Up to 30 V | Up to 36 V |
| Maximum Switching Frequency | 500 kHz | 500 kHz | 500 kHz | 500 kHz |
| Peak Turn-Off Drive Current | 4 A | 4 A | 2 A (typical) | 3 A |
| UVLO Protection | Yes (internal) | Yes (internal) | Yes (internal) | Yes (internal) |
| Anti-Bounce Logic | Yes | Yes | Yes | Yes |
Key Differentiators
- Highest drain-sense voltage in its class (200V) (vs NCP4306DADG)
- Highest peak turn-off drive current (4A) (vs NCP4306DADG)
- Dual-channel in smallest standard package (vs SRK2001D)
Design Notes
The drain-sense pin (DRAIN1 / DRAIN2) must be connected directly to the MOSFET drain with the shortest possible trace to avoid false triggering from PCB parasitic inductance. Recommended: keep the drain-sense loop area under 5 mm^2 and place a small RC snubber (10 ohm + 1 nF) close to the drain pin if ringing exceeds 50 V peak. The gate drive loop should also be kept short - return the GATE trace directly to the SOURCE pin of the same channel to minimize gate drive inductance.
VCC must be decoupled with a minimum 1 uF X7R ceramic capacitor placed within 3 mm of the VCC pin (pin 8). The 4A peak turn-off gate drive current causes fast VCC transients; an additional 10 uF bulk capacitor on the VCC rail is recommended. The VCC supply is typically derived from an auxiliary winding on the transformer; ensure the winding is designed to deliver between 9 V and 18 V under all load conditions, with adequate margin above UVLO threshold.
Estimated: at maximum gate drive duty cycle (500 kHz, 4A peak), the IR1168STRPBF dissipates approximately 200-400 mW in the SOIC-8 package (theta_JA ~150 C/W on a 1 oz copper 1 sq inch pad). This raises junction temperature by 30-60 C above ambient at 25 C ambient. In most applications the IC dissipation is dominated by gate charge of the driven MOSFETs rather than internal dissipation, so the IC rarely requires additional heatsinking beyond standard SOIC-8 land pattern copper.
Do not connect the drain-sense pin to the drain of a MOSFET whose body diode is conducting in reverse - the IR1168STRPBF only works correctly when sensing the drain-to-source voltage of a MOSFET used as a synchronous rectifier (forward-current flow). Common mistakes include miswiring DRAIN1/DRAIN2 to SOURCE pins (no triggering), or placing the sense resistor in the wrong position. Always verify with an oscilloscope that the GATE output goes high shortly after the drain voltage crosses zero (forward conduction begins) and goes low before the drain voltage reverses.
Anti-bounce logic in the IR1168STRPBF prevents multiple false trigger pulses caused by MOSFET drain ringing during turn-off transitions. For high-frequency designs (>300 kHz), an external gate resistor of 10-22 ohm in series with each GATE pin improves EMI and dampens oscillations. Place the gate resistor within 2 mm of the GATE pin output of the IC. Avoid using gate resistors larger than 47 ohm as they slow turn-off and increase body-diode conduction losses, reducing the efficiency benefit.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is a power-supply controller IC intended for industrial/commercial/consumer power conversion. Halogen-free status not explicitly stated in the verified datasheet snippet.
