IRFP1405PBF - 55V 95A N-Channel HEXFET MOSFET | Infineon
MPN: IRFP1405PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.88 | $28.80 |
| 100 | $2.45 | $245.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.92 | $1,920.00 |
IRFP1405PBF Overview
What is a HEXFET power MOSFET? HEXFET is a hex-cell power MOSFET technology that places vertical hexagonal cells in parallel to dramatically reduce on-resistance per unit silicon area. As a member of the discrete semiconductor family, it sits within the broader taxonomy of MOSFET -> transistor -> semiconductor. Power MOSFETs in the TO-247 family are the workhorse of medium- to high-current switching stages where efficiency and thermal performance are critical.
Key features of the IRFP1405PBF include a 55 V V(BR)DSS breakdown voltage, 5.3 mΩ R_DS(on) at VGS = 10 V (per Mouser listing), 95 A continuous drain current at Tc, 310 W maximum power dissipation, fast switching speed, improved repetitive avalanche rating, and 175 °C maximum junction temperature. The planar cell structure is optimized for broad availability through distribution and is qualified to JEDEC standards for industrial-grade reliability.
The IRFP1405PBF uses advanced process technology and a planar cell structure that delivers industry-leading low on-resistance per silicon area. The wide Safe Operating Area (SOA) and optimized repetitive avalanche capability allow the device to absorb transient energy during switching events. The TO-247AC through-hole package provides robust mechanical mounting and superior thermal conductivity compared to surface-mount alternatives, supporting high continuous current with proper heatsinking.
Typical applications include DC motor drives, uninterruptible power supplies (UPS), synchronous rectifier stages, solar inverters, switching power supplies, welding equipment, battery management systems, and high-current buck/boost converters. The combination of low R_DS(on), high current rating, and TO-247 thermal performance makes it well-suited for sub-100 kHz switching topologies.
When designing with this MOSFET, ensure adequate heatsinking to maintain junction temperature below 175 °C under worst-case load. The repetitive avalanche rating should be evaluated against actual switching transients in the application; for hard-switched topologies above 100 kHz, a part optimized for higher switching frequencies may offer better figure-of-merit.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical thermal design notes not found in the manufacturer datasheet alone, helping engineers shorten the component-selection and qualification cycle.
Drop-in alternatives for IRFP1405PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFP1405PBF (same form factor and footprint) — differing in Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF1405ZPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRFP1405PBF
✅ Drop-In✓ In Stock
$1.92 / Unit
View Datasheet →IRF2907ZPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFP3077PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.62 / Unit
View Datasheet →IRFP1405PBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (Planar cell) |
| Drain-to-Source Voltage (V_DSS) | 55 V |
| Continuous Drain Current (I_D) at Tc=25°C | 95 A |
| On-Resistance R_DS(on) at VGS=10V | 5.3 mΩ (typical per distributor listing) |
| Maximum Power Dissition at Tc=25°C | 310 W |
| Maximum Junction Temperature | 175 °C |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | TO-247AC (through-hole) |
| Mounting Type | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) |
| RoHS Status | Compliant (Pb-free suffix PBF) |
| Qualification | JEDEC standard (industrial grade) |
IRFP1405PBF Pin Configuration
| Pin 1 | Gate — Gate control input; V_GS(th) [DATA_NEEDED]; driven to 10 V for full enhancement |
| Pin 2 | Drain — Main current terminal; electrically tied to the metal tab; rated 55 V V_DSS, 95 A I_D |
| Pin 3 | Source — Return terminal for drain current and gate drive reference |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IRFP1405PBF is suitable for 6 applications: DC Motor Drive (H-Bridge / Half-Bridge), Uninterruptible Power Supply (UPS) / Battery Backup, Synchronous Rectifier in Switch-Mode Power Supply, Solar Inverter DC-DC Stage (MPPT Converter), Battery Management System (BMS) Discharge Path, Welding and Plasma Cutter Power Stage.
DC Motor Drive (H-Bridge / Half-Bridge)
The IRFP1405PBF is well-suited for 24 V/48 V brushed DC motor drive half-bridges and full H-bridges up to several horsepower. Its 5.3 mΩ typical R_DS(on) at VGS = 10 V minimizes conduction loss in the PWM low-side switch, while the 95 A continuous current rating provides substantial margin over typical 30 A motor phases. According to the Infineon datasheet, the planar cell structure offers a wide SOA for motor stall and inrush conditions. Compared with surface-mount alternatives, the TO-247AC through-hole package simplifies attachment to a chassis-mounted heatsink for sustained high-current operation. Designers should evaluate the repetitive avalanche rating against the inductive kick at PWM turn-off and ensure the heatsink keeps Tj below 150 °C under stall.
Recommended
Uninterruptible Power Supply (UPS) / Battery Backup
The IRFP1405PBF works well as the low-side switching element in 48 V UPS battery-to-bus converters. Its 55 V V_DSS provides comfortable margin above the 48 V nominal bus, and the 5.3 mΩ R_DS(on) at VGS = 10 V translates to under 5 W conduction loss per FET at 30 A continuous. According to the Infineon datasheet, the device's JEDEC qualification and 175 °C junction rating support the long-life reliability demands of UPS installations. The TO-247AC package dissipates 310 W with proper heatsinking, far exceeding the typical 5-15 W steady-state dissipation in this topology. The repetitive avalanche rating also handles the inductive kick from the output filter inductor during abrupt load transitions typical in UPS transfer events.
Recommended
Synchronous Rectifier in Switch-Mode Power Supply
The IRFP1405PBF serves as the synchronous rectifier MOSFET in 12 V/24 V/48 V isolated and non-isolated SMPS, replacing Schottky diodes to recover 0.5-1.0 V of forward drop. Its 5.3 mΩ R_DS(on) at VGS = 10 V with VGS drive of 10 V yields conduction loss similar to a 0.1-0.2 V Schottky at full load. According to the Infineon datasheet, the fast switching speed keeps dead-time losses low in CCM operation below 100 kHz. The TO-247AC package is appropriate for output stages above 30 A; below 30 A, surface-mount options offer better power density. Designers should include gate-source pull-down to prevent unintended turn-on during high dV/dt transitions across the synchronous rectifier.
Recommended
Solar Inverter DC-DC Stage (MPPT Converter)
The IRFP1405PBF fits solar MPPT boost and buck converters operating from 24 V/48 V PV strings. Its 55 V V_DSS handles 48 V open-circuit PV strings with margin for transient overvoltage, while the 5.3 mΩ R_DS(on) at VGS = 10 V maximizes MPPT efficiency under high-irradiance conditions. According to the Infineon datasheet, the planar HEXFET technology is optimized for sub-100 kHz switching common in solar MPPT, where the figure of merit of conduction loss dominates over switching loss. The TO-247AC mechanical package suits outdoor inverter enclosures with chassis-mounted heatsinks. The 95 A continuous current rating supports 3-5 kW MPPT stages with adequate heatsinking, while the 175 °C junction temperature enables reliable operation in elevated ambient temperatures.
Recommended
Battery Management System (BMS) Discharge Path
The IRFP1405PBF works as the main discharge MOSFET in 24 V/48 V battery management systems for e-mobility, robotics, and stationary storage. Its 5.3 mΩ R_DS(on) at VGS = 10 V keeps continuous conduction loss manageable at 50-80 A discharge currents, while the 55 V V_DSS provides ample margin over 48 V nominal packs. According to the Infineon datasheet, the wide SOA absorbs inrush transients during precharge of large capacitive loads typical in EV and robotics applications. The TO-247AC package supports the high continuous current and enables chassis mounting for thermal dissipation. Designers should add a TVS across drain-source to clamp inductive transients during short-circuit interruption events.
Recommended
Welding and Plasma Cutter Power Stage
The IRFP1405PBF suits the high-current secondary switch in inverter welding machines and plasma cutters rated 100-200 A output. Its 95 A continuous drain rating and 310 W power dissipation rating in TO-247AC support the burst-mode high-current demands of arc welding. According to the Infineon datasheet, the improved repetitive avalanche rating handles the flyback energy from the welding transformer during arc-strike and arc-loss events without device failure. The 5.3 mΩ R_DS(on) at VGS = 10 V keeps conduction loss manageable during steady arc sustain. The TO-247AC through-hole mounting accepts screw-attached heatsinks typical in welder enclosures for the high continuous thermal load.
Recommended
Recommended Products Summary
Engineering reference data for IRFP1405PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF1405ZPBF | IRFP1405PBF | IRF2907ZPBF | IRFP3077PBF | IRFB3207ZPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-247AC | TO-247AC (same) | TO-247AC (same) | TO-247AC (same) | TO-247AC (same) | TO-262/I2PAK (pinout-compatible GDS) |
| V_DSS (V) | 55 | 55 | 55 | 75 | 75 | 75 |
| Maximum Junction Temperature (°C) | 175 | 175 | 175 | 175 | 175 | 175 |
| Repetitive Avalanche Rating | Improved (per datasheet feature) | Improved | Improved | Improved | Improved | Improved |
| Approx Unit Price (USD, qty 100) | 2.45 | 3.00-3.50 | 2.45 | 2.80-3.20 | 3.50-4.00 | 2.20-2.60 |
Key Differentiators
- Ultra-low 5.3 mΩ R_DS(on) at VGS=10V in TO-247AC (vs IRFP4110PBF)
- Lower voltage class enables tighter SOA at high current (vs IRFP3077PBF)
- Wide availability through distribution (vs IRFP1405PBF competitors)
Design Notes
At continuous 95 A load with 30 mΩ effective R_DS(on) (including thermal effect) and Tc = 100 °C, conduction loss is approximately P = I² × R = 95² × 0.0053 ≈ 48 W per device. With TO-247AC junction-to-case thermal resistance of ~0.4 °C/W and junction-to-ambient of ~40 °C/W without heatsink, a heatsink with thermal resistance below 1 °C/W is required to keep Tj below 150 °C at 30 °C ambient. Mount the TO-247AC tab to the heatsink with thermal compound and a clip or screw applying 0.3-0.5 N·m torque for low thermal-interface resistance. Estimated: based on datasheet 5.3 mΩ R_DS(on) and typical TO-247 Rth figures; verify against the heatsink manufacturer's derating curve.
Minimize the gate-drive loop area by placing the gate-driver output directly adjacent to the gate-source pins with short, wide traces. The high dI/dt of the power loop (drain to source through the FET and back) demands a tight power-loop layout using the drain tab and source pin as the loop anchor. Use a low-inductance source return (Kelvin connection where possible) by bringing the gate driver ground reference directly to the source pin rather than the power ground plane. This prevents gate-drive ringing and dv/dt-induced turn-on that can destroy the MOSFET in half-bridge topologies.
Do not operate the IRFP1405PBF above its 55 V V_DSS rating, including transient spikes from inductive loads; add a TVS or RCD snubber across drain-source if inductive kick is expected (motor, transformer, relay). The gate is sensitive to ESD below approximately 20 V per JEDEC classification; observe standard ESD handling precautions. For hard-switched applications above 100 kHz, evaluate switching losses using the datasheet's gate-charge and output-capacitance curves, since the IRFP1405PBF is optimized for sub-100 kHz switching per its planar-cell structure. Using the IRFP1405PBF above 100 kHz in hard-switched topologies may cause excessive switching loss and thermal runaway.
Compliance Information
Pb-free suffix 'PBF' indicates lead-free (RoHS) per Infineon part-number convention; JEDEC-qualified industrial grade; not AEC-Q100 qualified (use automotive-grade equivalents for automotive).
