IRFP250NPBF - 200V 30A N-Channel HEXFET MOSFET | Infineon
MPN: IRFP250NPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.12 | $3.12 |
| 10 | $2.78 | $27.80 |
| 100 | $2.41 | $241.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.78 | $1,780.00 |
IRFP250NPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source. Within the broader hierarchy, the IRFP250NPBF sits as: power MOSFET -> discrete semiconductor -> N-channel enhancement-mode device -> HEXFET family (Infineon/IR proprietary planar cell technology). The planar cell structure gives a wide safe operating area (SOA), which is essential for inductive switching loads such as motors and transformers.
Key features include dynamic dv/dt rating, ease of paralleling, fully avalanche-rated performance, simple drive requirements, and fast switching. The TO-247AC through-hole package provides low thermal resistance and is a long-standing industry-standard footprint, which simplifies PCB layout, mounting hardware selection, and heatsink attachment. The part is silicon-optimized for applications switching below 100 kHz and is qualified per JEDEC standards.
The fifth-generation HEXFET process reduces conduction losses (low RDS(on)) while preserving the ruggedness that designers expect from earlier generations. Avalanche energy rating ensures the device can absorb unclamped inductive switching transients without destructive failure, an important attribute in motor drive and solenoid circuits where back-EMF is unavoidable.
Typical applications include high-power DC-DC converters, uninterruptible power supplies (UPS), solar inverters, motor drive circuits (H-bridge and three-phase), welding equipment, induction heating, and switched-mode power supplies (SMPS) at the 1-5 kW power level. The 200 V rating also makes it suitable for 120 V rectified bus and PFC boost stages.
When designing with this part, carefully calculate worst-case power dissipation (P = I^2 x RDS(on)) and verify that the chosen heatsink keeps Tj below 175 C. The gate drive voltage should swing between 10 V and 12 V for full enhancement and minimum RDS(on); under-driven gates dramatically increase conduction loss.
This page synthesizes distributor pricing, drop-in alternatives in the TO-247AC footprint, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRFP250NPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFP250NPBF (same form factor and footprint) β differing in Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFP260N
β Drop-Inπ Reference alternative (not in catalog)
IRFP250MPBF
β Drop-Inβ In Stock
$2.55 / Unit
View Datasheet βIRFP4227PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFP4668PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFPE50
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
STW34NM20N
β Drop-Inπ Reference alternative (not in catalog)
IRFP250NPBF Maximum Ratings & Electrical Characteristics
| Technology | N-Channel HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC | 30 A |
| Power Dissipation (PD) at TC | 214 W |
| Package | TO-247AC (through-hole) |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55 C to +175 C (TJ) |
| Avalanche Energy Rating | Fully avalanche rated |
| dv/dt Rating | Dynamic dv/dt rated |
| Switching Frequency Optimization | Optimized for applications below 100 kHz |
| Qualification Standard | JEDEC |
| Lead-Free Status | Yes (PBF suffix) |
| RoHS Status | Compliant |
| Planar Cell Structure | Yes (wide SOA) |
IRFP250NPBF Pin Configuration
| Pin 1 | Gate β Gate control input - drive between 10V and 12V for full enhancement |
| Pin 2 | Drain β Drain terminal - internally connected to the metal mounting tab |
| Pin 3 | Source β Source terminal - reference for gate drive |
Safe Operating Area (DC)
Typical Applications
IRFP250NPBF is suitable for 6 applications: Switched-Mode Power Supplies (SMPS), Motor Drive (H-Bridge / Three-Phase Inverter), Uninterruptible Power Supplies (UPS), Solar Inverter / DC-AC Conversion, Welding Equipment / Induction Heating, PFC Boost Converter (Power Factor Correction).
Switched-Mode Power Supplies (SMPS)
The IRFP250NPBF suits primary-side switching in offline SMPS at the 1-5 kW level, where its 200 V VDS provides margin over rectified 120 VAC or 170 VDC bus rails. Low RDS(on) at VGS=10V minimizes conduction loss in continuous-conduction-mode PFC and forward converter topologies. The HEXFET fifth-generation process also delivers low gate charge, simplifying MOSFET driver selection. Designers should still validate avalanche energy for clamp-mode operation; the part is rated fully avalanche-rated per Infineon datasheet.
Recommended
Motor Drive (H-Bridge / Three-Phase Inverter)
In H-bridge and three-phase inverter circuits driving brushed or brushless DC motors, the IRFP250NPBF's 200 V VDS handles back-EMF transients while 30 A ID suits fractional-horsepower industrial motors. Dynamic dv/dt rating ensures reliable switching under PWM control, and the planar cell structure provides wide SOA for pulsed motor-starting currents. The TO-247AC package accepts standard thermal pads for chassis or forced-air heatsink mounting in motor control enclosures.
Recommended
Uninterruptible Power Supplies (UPS)
The IRFP250NPBF operates as a low-side switch in UPS battery-to-AC inverter stages, where 200 V VDS accommodates 192 VDC telecom battery stacks with margin. The 214 W power dissipation rating supports continuous inverter operation at moderate switching frequencies below 100 kHz, optimized per Infineon datasheet. Planar-cell wide SOA and avalanche rating ensure survival of load-step and short-circuit transients common during UPS transfer events.
Recommended
Solar Inverter / DC-AC Conversion
In solar micro-inverters and string inverters, the IRFP250NPBF switches the DC bus to drive a high-frequency transformer or feed a grid-tie H-bridge stage. The 200 V rating suits 48 V panel strings with headroom, and low RDS(on) reduces I^2R loss during peak power point tracking. The TO-247AC package's thermal performance supports outdoor IP65 inverter enclosures with passive cooling.
Recommended
Welding Equipment / Induction Heating
Welding inverters and induction-heating resonant tanks benefit from the IRFP250NPBF's fully avalanche-rated construction and wide SOA planar cell structure. The part tolerates the unclamped inductive switching events that occur during arc strike and resonant tank commutation. Through-hole TO-247AC mounting with a bolted heatsink supports the high duty cycles typical of industrial welding power stages operating near 20-50 kHz.
Recommended
PFC Boost Converter (Power Factor Correction)
In continuous-conduction-mode PFC boost stages fed from a 120 VAC rectified mains (~170 VDC link), the IRFP250NPBF's 200 V VDS provides adequate safety margin and its low RDS(on) at full gate drive reduces conduction losses at peak line currents. The dynamic dv/dt rating simplifies snubber design, while the fifth-generation HEXFET process optimizes reverse-recovery behavior to minimize PFC diode stress. Junction temperature must be derated for ambient in enclosed PFC modules.
Recommended
Recommended Products Summary
Engineering reference data for IRFP250NPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFP260N | IRFP250M | IRFP4227PBF | IRFP4668PBF | STW34NM20N |
|---|---|---|---|---|---|---|
| Package | TO-247AC (through-hole) | TO-247AC (through-hole) - same | TO-247AC (through-hole) - same | TO-247AC (through-hole) - same | TO-247AC (through-hole) - same | TO-247AC (through-hole) - same |
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | STMicroelectronics (cross-brand) |
| Drain-Source Voltage VDS | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Continuous Drain Current ID | 30 A | 50 A | 30 A | 65 A | 130 A | 34 A |
| Pinout | TO-247AC G-D-S | TO-247AC G-D-S (same) | TO-247AC G-D-S (same) | TO-247AC G-D-S (same) | TO-247AC G-D-S (same) | TO-247AC G-D-S (same) |
| Process Generation | Fifth-Generation HEXFET | Fifth-Generation HEXFET | Earlier generation | Later generation | Later generation | STMicroelectronics MDmesh |
| Avalanche Rated | Yes (fully) | Yes | Yes | Yes | Yes | Yes |
| Approximate 1kpc Price (USD) | $1.78 | $2.10 (estimated) | $1.55 (estimated) | $2.85 (estimated) | $4.20 (estimated) | $1.95 (estimated) |
Key Differentiators
- Fifth-generation HEXFET process delivers lower RDS(on) per silicon area (vs IRFP250M)
- Higher current headroom in same TO-247AC footprint (vs IRFP260N)
- Wide SOA planar cell structure absorbs unclamped inductive transients (vs IRFP4227PBF)
Design Notes
Estimated: at continuous ID=20A and RDS(on)=0.045 Ohm, conduction loss P=I^2*R is approximately 18W. The TO-247AC junction-to-case thermal resistance (RthJC) is roughly 0.75 C/W per Infineon datasheet, producing a 13.5 C junction rise above case. With a typical 1 C/W case-to-heatsink interface and 0.5 C/W heatsink-to-ambient, total RthJA is approximately 2.25 C/W, yielding ~40 C junction rise at 18W. Verify TJ stays below 175 C under worst-case ambient in your enclosure.
For through-hole TO-247AC mounting, drill 1.5 mm holes on a 5.45 mm x 1.4 mm pitch to accept the three leads. Use a silicone or mica insulating washer between the metal tab and the heatsink if the heatsink is grounded, since the tab is internally connected to the drain. Apply a thin layer of thermal compound (0.05 mm bond line) to minimize case-to-heatsink thermal resistance. Torque the mounting screw to 0.7-1.0 N-m to avoid cracking the ceramic body.
Keep the gate-drive loop physically small: place the gate-driver IC within 2 cm of the gate pin, and use a tight source-return path to minimize parasitic inductance. The TO-247AC source lead inductance is significant; a Kelvin connection to the source sense pin (where available) or star-grounded layout dramatically reduces turn-on ringing. Add a 10 Ohm gate resistor and a small ferrite bead if dv/dt-induced ringing exceeds 20 V on the gate.
Driving the gate with only 5 V (logic-level signal) leaves the IRFP250NPBF in the linear region with very high RDS(on), causing excessive conduction loss and thermal runaway. Always drive between 10 V and 12 V for full enhancement. Also, do not exceed the avalanche energy rating during unclamped inductive switching - add a TVS clamp or RCD snubber across the drain-source if the load is highly inductive.
At switching frequencies above 50 kHz, gate charge (Qg) becomes a significant driver-loss contributor. Estimated: Qg ~ 100 nC at VGS=10V per the IRFP250N datasheet, yielding 5 mJ/s gate-drive loss at 50 kHz (P=Qg*Vg*Fsw). Use a gate driver capable of 1-2 A peak source/sink current to achieve fast 50 ns switching transitions and minimize the crossover loss window. A negative gate-bias turn-off (-5V) further reduces parasitic turn-on in half-bridge topologies.
Compliance Information
PBF suffix denotes lead-free plating per Infineon product page. RoHS compliant. Not AEC-Q100 qualified (industrial/consumer use, not automotive). JEDEC-qualified silicon process.
