H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
N.º da peça: H5AN8G6NCJR-xxC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
H5AN8G6NCJR-xxC Visão geral
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the industry standard for main memory in servers, desktops, laptops, and high-performance computing systems, offering higher bandwidth and lower power consumption than its predecessor DDR3. DDR4 operates at lower voltages (1.2V typical) and supports higher densities, making it essential for modern computing platforms.
Key features of the H5AN8G6NCJR-xxC include a data rate of 2666 Mbps (as indicated by the 'VKC' speed grade), a 1.2V power supply, and a x16 organization (8Gb density organized as 512M x 16). The device supports standard DDR4 features such as on-die termination (ODT), programmable read/write latencies, and burst lengths of 8 and 4 with burst chop. It is available in a 96-ball FBGA package, which is the standard for DDR4 memory components.
The H5AN8G6NCJR-xxC utilizes advanced CMOS process technology, enabling high-speed operation with low power consumption. The device includes a temperature-compensated self-refresh (TCSR) feature to reduce power in idle states, and supports a wide operating temperature range from 0°C to 95°C (TC) for standard operation. The memory is organized into 8 banks, providing efficient access patterns for high-bandwidth applications.
Typical applications include server main memory, desktop and laptop RAM modules, networking equipment, and high-performance embedded systems. The high density and bandwidth make it suitable for data-intensive workloads such as cloud computing, virtualization, and real-time analytics. The device is also used in memory modules (DIMMs/SO-DIMMs) for consumer and enterprise computing.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a separate VPP supply of 2.5V for wordline boost. Refer to the SK Hynix datasheet for detailed timing parameters and AC/DC operating conditions.
Alternativas drop-in para H5AN8G6NCJR-xxC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5AN8G6NCJR-xxC (mesmo formato e footprint) — diferindo em Package, Density, Organization, Burst Length, CAS Latency.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5AN8G6NDJR-xxC
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
H5AN8G8NCJR-xxC
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
H5AN8G4NCJR-xxC
✅ Drop-In✓ Em estoque
$8.5 / unidade
Ver ficha técnica →H5AN8G6NAFR-xxC
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
MT41K256M16HA-125:E
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$3.1 / unidade
Ver ficha técnica →K4B4G1646D-BYK00
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$7.5 / unidade
Ver ficha técnica →H5AN8G6NCJR-xxC Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Density | 8 Gb |
| Organização da memória | 512M x 16 |
| Taxa de dados | 2666 Mbps (VKC speed grade) |
| Supply Voltage (VDD) | 1.2 V |
| VPP Supply | 2.5 V |
| Operating Temperature (TC) | 0°C to 95°C |
| Encapsulamento | 96-ball FBGA |
| Number of Banks | 8 |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | Supported |
| Self-Refresh | Temperature-compensated (TCSR) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Tipo de montagem | Surface Mount |
Configuração de pinos do H5AN8G6NCJR-xxC
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ2 — Data input/output 2 |
| Pino B3 | DQ3 — Data input/output 3 |
| Pino C1 | VDDQ — Data power supply (1.2V) |
| Pino C2 | DQS_t — Data strobe (true) |
| Pino C3 | DQS_c — Data strobe (complement) |
| Pino D1 | VSSQ — Data ground |
| Pino D2 | CK_t — Clock (true) |
| Pino D3 | CK_c — Clock (complement) |
Aplicações típicas
H5AN8G6NCJR-xxC é adequado para 6 aplicaçãos: Server Main Memory, Desktop and Laptop RAM, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics.
Server Main Memory
The H5AN8G6NCJR-xxC provides 8Gb density and 2666 Mbps bandwidth, making it ideal for server DIMM modules. Its high capacity supports virtualization, cloud computing, and large-scale data processing. The 1.2V operation reduces power consumption in data centers, while the 96-ball FBGA package enables high-density module designs. When used in RDIMMs or LRDIMMs, it delivers the performance needed for enterprise workloads.
Recomendado
Desktop and Laptop RAM
The H5AN8G6NCJR-xxC is used in SO-DIMM and UDIMM modules for consumer computing. Its 8Gb density allows 16GB modules with 16 devices, and the 2666 Mbps speed supports modern CPUs. The low 1.2V supply reduces heat generation, making it suitable for compact laptops. The x16 organization simplifies module design by reducing the number of devices needed for a 64-bit data bus.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the H5AN8G6NCJR-xxC provides high-bandwidth memory for packet buffering and routing tables. Its 2666 Mbps data rate ensures fast processing of network traffic, while the 8Gb density supports large forwarding databases. The device's synchronous operation with both clock edges enables efficient data transfer in high-speed networking applications.
Recomendado
Embedded Systems
For high-performance embedded systems such as industrial PCs and edge computing devices, the H5AN8G6NCJR-xxC offers the density and bandwidth needed for real-time data processing. Its wide operating temperature range (0°C to 95°C) allows use in harsh environments. The 96-ball FBGA package is suitable for compact PCB designs, and the low power consumption is beneficial for power-constrained applications.
Recomendado
High-Performance Computing
The H5AN8G6NCJR-xxC is used in HPC systems where large memory capacity and high bandwidth are critical. Its 8Gb density allows building large memory pools, and the 2666 Mbps speed supports compute-intensive workloads like scientific simulations and AI training. The device's on-die termination and programmable latencies enable fine-tuning for maximum performance in multi-channel memory architectures.
Recomendado
Consumer Electronics
In high-end consumer devices such as gaming consoles and smart TVs, the H5AN8G6NCJR-xxC provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb density supports large application footprints, and the 1.2V operation helps manage thermal budgets. The x16 organization is ideal for applications requiring a wide data bus, such as integrated graphics.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5AN8G6NCJR-xxC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5AN8G6NDJR-xxC | H5AN8G8NCJR-xxC | MT41K256M16HA-125:E |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 1G x 8 | 256M x 16 |
| Data Rate | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- Higher density than some alternatives (vs MT41K256M16HA-125:E)
- Wider data bus (x16) (vs H5AN8G8NCJR-xxC)
- Higher data rate (vs MT41K256M16HA-125:E)
Notas de projeto
Ensure stable 1.2V VDD and 2.5V VPP supplies. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD and VDDQ pin. The VPP supply is critical for wordline boost; inadequate decoupling can cause write failures.
Follow the PCB layout guidelines in the SK Hynix datasheet for DDR4 routing. Maintain controlled impedance for DQ, DQS, and clock signals (typically 40-50 ohms single-ended). Keep trace lengths matched within +/- 10 mils for data groups to ensure signal integrity at 2666 Mbps.
The device operates up to 95°C TC. In high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate power dissipation based on operating conditions.
Informações de conformidade
RoHS compliant per SK Hynix datasheet. AEC-Q100 not applicable for memory components.
