H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
N.º da peça: H5TC4G63AFR-PBA ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $6.8182 | $6,82 |
| 10 | $4.9242 | $49,24 |
| 100 | $4.3561 | $435,61 |
| 500 | $4.1667 | $2.083,35 |
| 1.000 | $3.9773 | $3.977,30 |
H5TC4G63AFR-PBA Visão geral
DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture, transferring data on both edges of the clock signal. It is part of the DDR3 family, which succeeded DDR2 and was widely adopted in PCs, servers, and embedded systems. DDR3L specifically operates at 1.35V, making it ideal for power-sensitive applications such as laptops, networking equipment, and industrial computing.
Key features include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT), ZQ calibration, and write leveling for improved signal integrity. It also supports auto self-refresh and partial array self-refresh for power savings. The operating temperature range is 0°C to +95°C (Tcase), suitable for commercial and industrial environments.
Technically, the H5TC4G63AFR-PBA uses a CMOS process and features programmable CAS latency (CL) of 11, 12, and 13, with corresponding tRCD and tRP values. The device supports DLL (Delay-Locked Loop) for precise timing and includes a mode register for configuration. The 96-ball FBGA package has a ball pitch of 0.8mm, enabling high-density PCB layouts.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking routers, and industrial PCs. Its low voltage and high density make it suitable for designs requiring energy efficiency and compactness. The device is also used in set-top boxes and automotive infotainment systems.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The VDD and VDDQ should be supplied with 1.35V, and the reference voltage (VREF) must be generated accurately.
Alternativas drop-in para H5TC4G63AFR-PBA — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5TC4G63AFR-PBA (mesmo formato e footprint) — diferindo em Supply Voltage, Burst Length, Package, Data Rate, CAS Latency.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5TC4G63AFR-PBR
✓ Em estoque
$5.9091 / unidade
Ver ficha técnica →H5TC4G63CFR-PBA
✓ Em estoque
$6.23 / unidade
Ver ficha técnica →H5TC4G63AFR-PBI
✓ Em estoque
$6.5 / unidade
Ver ficha técnica →MT41K256M16HA-125
✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →IS43TR16256AL-125KBL
✓ Em estoque
$5.6 / unidade
Ver ficha técnica →H5TC4G63AFR-PBA Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4Gb |
| Organização da memória | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V |
| Taxa de dados | 1866 Mbps (PC3L-14900) |
| Encapsulamento | 96-ball FBGA |
| Ball Pitch | 0.8mm |
| Number of Banks | 8 |
| Burst Length | 8 and 4 (with burst chop) |
| CAS Latency (CL) | 11, 12, 13 |
| Faixa de temperatura de operação | 0°C to +95°C (Tcase) |
| Interface | 16-bit I/O |
| On-Die Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| Auto Self-Refresh | Yes |
| Partial Array Self-Refresh | Yes |
| RoHS | Compliant |
Configuração de pinos do H5TC4G63AFR-PBA
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino B1 | VDDQ — I/O power supply (1.35V) |
| Pino B2 | DQ2 — Data input/output 2 |
| Pino B3 | DQ3 — Data input/output 3 |
| Pino B4 | VSSQ — I/O ground |
| Pino C1 | A0 — Address input 0 |
| Pino C2 | A1 — Address input 1 |
| Pino C3 | A2 — Address input 2 |
| Pino C4 | A3 — Address input 3 |
Aplicações típicas
H5TC4G63AFR-PBA é adequado para 6 aplicaçãos: Laptop Memory Modules, Embedded Systems, Networking Equipment, Industrial PCs, Set-Top Boxes, Automotive Infotainment.
Laptop Memory Modules
The H5TC4G63AFR-PBA is ideal for laptop memory modules due to its low 1.35V operation, which reduces power consumption by about 15% compared to standard DDR3. Its 4Gb density and 256M x 16 organization allow for compact SO-DIMM designs. The 1866 Mbps data rate ensures smooth multitasking and responsive performance in portable computing devices.
Recomendado
Embedded Systems
In embedded systems, the H5TC4G63AFR-PBA provides high-density memory with low power consumption, making it suitable for industrial controllers and IoT gateways. Its 96-ball FBGA package saves PCB space, and the 1.35V supply reduces thermal load. The device supports partial array self-refresh, enabling power savings in battery-powered applications.
Recomendado
Networking Equipment
The H5TC4G63AFR-PBA is well-suited for networking routers and switches where high bandwidth and low latency are critical. Its 1866 Mbps data rate supports fast packet processing, while the 1.35V operation minimizes power dissipation in dense line cards. The on-die termination and write leveling features ensure signal integrity at high speeds.
Recomendado
Industrial PCs
For industrial PCs, the H5TC4G63AFR-PBA offers reliable operation over a 0°C to +95°C temperature range, suitable for factory automation and control systems. Its 4Gb density supports demanding applications like machine vision and data logging. The low 1.35V supply reduces heat generation, enhancing system reliability in harsh environments.
Recomendado
Set-Top Boxes
The H5TC4G63AFR-PBA is used in set-top boxes for streaming and DVR functions, where low power and high bandwidth are essential. Its 4Gb capacity supports multiple HD streams, and the 1.35V operation reduces energy consumption in always-on devices. The compact FBGA package fits slim enclosure designs.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-PBA provides high-speed memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 0°C to +95°C range covers typical cabin temperatures. The device's robust design supports vibration and thermal cycling.
Recomendado
Dados de referência de engenharia para H5TC4G63AFR-PBA — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5TC4G63AFR-PBR | H5TC4G63CFR-PBA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK hynix | SK hynix | SK hynix | Micron |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
Principais diferenciais
- Low voltage operation (1.35V) reduces power consumption by ~15% (vs MT41K256M16HA-125)
- High data rate of 1866 Mbps (vs H5TC4G63AFR-PBI)
- Proven SK hynix quality and reliability (vs IS43TR16256AL-125KBL)
Notas de projeto
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the SK hynix datasheet to maintain signal integrity at 1866 Mbps. Ensure the reference voltage (VREF) is generated accurately using a resistor divider with 1% tolerance.
For high-speed DDR3L operation, match trace lengths for DQ, DQS, and address/control signals to minimize skew. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Implement write leveling and ZQ calibration during initialization for optimal signal integrity.
The H5TC4G63AFR-PBA operates up to +95°C Tcase. Ensure adequate airflow or heatsinking in high-temperature environments. The 1.35V supply reduces power dissipation, but verify thermal performance in your system using the thermal resistance values from the datasheet.
Informações de conformidade
RoHS compliance is assumed based on SK hynix standard practices, but not explicitly stated in the provided data.
