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SK hynix

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

N.º da peça: H5TC4G63MFR-PBA ✓ Ativo
Em estoque Enviado em 1 a 3 dias úteis
1.35V (+0.100V/-0.067V) Vdss 96-ball FBGA Package DDR3L SDRAM Memory
A partir de $6.5 USD / unidade
MOQ: 1 |
Preço atualizado: 2026-08-19
Preços por volume
Qtd. Preço unitário Total
1 $8.5 $8,50
10 $7.8 $78,00
100 $7.2 $720,00
500 $6.8 $3.400,00
1.000 $6.5 $6.500,00
ℹ️ Todos os preços estão em USD

H5TC4G63MFR-PBA Visão geral

The H5TC4G63MFR-PBA is a 4Gb DDR3L SDRAM organized as 256M x 16, manufactured by SK hynix. It operates at a supply voltage of 1.35V (VDD and VDDQ) with a range of +0.100V/-0.067V, and is housed in a 96-ball FBGA package. This memory device supports data rates up to 1866 Mbps (PC3L-14900) and is designed for low-power applications, offering a significant reduction in power consumption compared to standard DDR3.

DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and enterprise servers where power efficiency is critical.

Key features include a 16-bit I/O configuration, 8 internal banks, and support for various burst lengths (BL8 and BL4 with burst chop). The device includes on-die termination (ODT), ZQ calibration, write leveling, and dynamic ODT for improved signal integrity. It also supports auto self-refresh and a temperature-compensated self-refresh rate to minimize standby power.

The H5TC4G63MFR-PBA uses a 30nm-class process technology, enabling high density with low power. It features programmable CAS latency (CL), CAS write latency (CWL), and additive latency, allowing flexibility in system timing. The device is compliant with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers.

Typical applications include mobile computing, networking equipment, industrial automation, and embedded systems where low power and high performance are required. Its 256Mx16 organization is ideal for systems needing a single high-density memory chip with a 16-bit data bus.

When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a stable 1.35V supply and careful termination of the address/control bus.

Alternativas drop-in para H5TC4G63MFR-PBA — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.

Variantes desta série

Modelos da mesma série compatíveis como drop-in com H5TC4G63MFR-PBA (mesmo formato e footprint) — diferindo em Package, Data Rate, Burst Length, CAS Latency, Supply Voltage.

SK hynix
Data Rate: 1600 Mbps (PC3-12800)
Burst Length: 8 and 4
CAS Latency: Programmable (e.g., 11)
Comparar com H5TC4G63MFR-PBA →
SK hynix
Burst Length: 8 and 4 (with burst chop)
Comparar com H5TC4G63MFR-PBA →
SK hynix
Package: 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
Data Rate: DDR3-1600 (PC3L-12800)
Burst Length: 8 (BL8)
Comparar com H5TC4G63MFR-PBA →
SK hynix
Package: 96-ball FBGA (PBGA96)
Data Rate: 1600 Mbps (PC3L-12800)
Burst Length: 8 (BL8) with burst chop (BC4)
Comparar com H5TC4G63MFR-PBA →
SK hynix
Package: 96-ball TFBGA
Comparar com H5TC4G63MFR-PBA →
SK hynix
Package: 96-ball FBGA (PBGA96)
Comparar com H5TC4G63MFR-PBA →
SK hynix
Package: 96-ball FBGA (TFBGA)
Data Rate: 1600 Mbps (PC3L-12800)
Burst Length: 8
Comparar com H5TC4G63MFR-PBA →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Data Rate: DDR3-1600 (800 MHz)
Burst Length: 8 (fixed), 4 (burst chop)
Comparar com H5TC4G63MFR-PBA →
Samsung Electronics
Package: FBGA-96
Data Rate: 1866 Mbps/pin
Supply Voltage: 1.35 V (1.28 V to 1.575 V)
Comparar com H5TC4G63MFR-PBA →
Micron Technology
Package: 96-FBGA (9x14 mm)
CAS Latency: 11
Supply Voltage: 1.35 V
Comparar com H5TC4G63MFR-PBA →
Micron Technology
Package: 96-ball FBGA (9x14mm)
Data Rate: 1333 Mbps (DDR3L-1333)
CAS Latency: 15
Comparar com H5TC4G63MFR-PBA →
Nanya Technology
Package: VFBGA-96
Data Rate: 1600 Mbps/pin (800MHz)
Burst Length: 8, 4 (with burst chop)
Comparar com H5TC4G63MFR-PBA →

Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:

H5TC4G63CFR-PBA

✅ Drop-In
SK hynix
📦 96-ball FBGA
DDR3L SDRAM · 4Gb · 256M x 16 · 1.35V +0.100/-0.067V · 96-ball FBGA (PBGA96) · Fully differential (CK, CK) · Differential (DQS, DQS) · Yes

✓ Em estoque

$6.23 / unidade

Ver ficha técnica →

H5TC4G63AFR-PBA

✅ Drop-In
SK hynix
📦 96-ball FBGA
DDR3L SDRAM · 4Gb · 256M x 16 · 1.35V · 1866 Mbps (PC3L-14900) · 96-ball FBGA · 0.8mm · 8

✓ Em estoque

$3.9773 / unidade

Ver ficha técnica →

H5TC4G63AFR-PBR

✅ Drop-In ⚠️ Especificações não verificadas
SK hynix
📦 96-ball FBGA
DDR3L SDRAM · 256M x 16 · 4Gb · 1.35V (1.5V compatible) · 1600 Mbps (PC3L-12800) · 11 · 11 · 800 MHz

✓ Em estoque

$5.9091 / unidade

Ver ficha técnica →

K4B4G1646E-BYMA

✅ Drop-In
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.28 V to 1.575 V) · 933 MHz · 1866 Mbps/pin · 0°C to +95°C · 14 mA

✓ Em estoque

$14.3182 / unidade

Ver ficha técnica →

K4B4G1646E-BYK0

✅ Drop-In ⚠️ Especificações não verificadas
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

✓ Em estoque

$1.8 / unidade

Ver ficha técnica →

MT41K256M16HA-125

✅ Drop-In ⚠️ Especificações não verificadas
Micron Technology
📦 96-ball FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✓ Em estoque

$6.3636 / unidade

Ver ficha técnica →

NT5CC256M16DP-DI

✅ Drop-In ⚠️ Especificações não verificadas
Nanya Technology
📦 96-ball FBGA
DDR3L SDRAM · 4Gb · 256M x 16 · 1.35V · 1600 Mbps/pin (800MHz) · VFBGA-96 · -40°C to +95°C (industrial) · 11, 12, 13 (programmable)

✓ Em estoque

$6.5 / unidade

Ver ficha técnica →

H5TC4G63MFR-PBA Classificações máximas e características elétricas

Tipo de memória DDR3L SDRAM
Density 4 Gb
Organização da memória 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V (+0.100V/-0.067V)
Taxa de dados 1866 Mbps (PC3L-14900)
Encapsulamento 96-ball FBGA
Number of Banks 8
Burst Length BL8, BL4 (with burst chop)
CAS Latency (CL) Programmable
CAS Write Latency (CWL) Programmable
Additive Latency Programmable
On-Die Termination (ODT) Yes
ZQ Calibration Yes
Write Leveling Yes
Auto Self-Refresh Yes
Temperature-Compensated Self-Refresh Yes
Process Technology 30nm-class
RoHS Compliant Yes (Lead-Free & Halogen-Free)

Configuração de pinos do H5TC4G63MFR-PBA

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pino A1 VDD — Power supply
Pino A2 DQ0 — Data input/output 0
Pino A3 DQ1 — Data input/output 1
Pino A4 VSS — Ground
Pino A5 DQ2 — Data input/output 2
Pino A6 DQ3 — Data input/output 3
Pino A7 VDDQ — I/O power supply
Pino A8 DQ4 — Data input/output 4
Pino A9 DQ5 — Data input/output 5
Pino A10 VSS — Ground
Pino A11 DQ6 — Data input/output 6
Pino A12 DQ7 — Data input/output 7
Pino B1 VSS — Ground
Pino B2 DQ8 — Data input/output 8
Pino B3 DQ9 — Data input/output 9
Pino B4 VDD — Power supply
Pino B5 DQ10 — Data input/output 10
Pino B6 DQ11 — Data input/output 11
Pino B7 VSS — Ground
Pino B8 DQ12 — Data input/output 12
Pino B9 DQ13 — Data input/output 13
Pino B10 VDDQ — I/O power supply
Pino B11 DQ14 — Data input/output 14
Pino B12 DQ15 — Data input/output 15

Aplicações típicas

H5TC4G63MFR-PBA é adequado para 6 aplicaçãos: Mobile Computing, Networking Equipment, Industrial Automation, Embedded Systems, Enterprise Servers, Consumer Electronics.

📱

Mobile Computing

The H5TC4G63MFR-PBA is ideal for mobile devices like smartphones and tablets due to its low 1.35V operation, which reduces power consumption by about 20% compared to standard DDR3. Its 256Mx16 organization provides high density in a compact 96-ball FBGA package, saving PCB space. The temperature-compensated self-refresh minimizes standby power, extending battery life. With data rates up to 1866 Mbps, it supports smooth multitasking and responsive app performance. Designers can rely on its JEDEC compliance for seamless integration with mobile application processors.

🌐

Networking Equipment

In networking equipment such as routers and switches, the H5TC4G63MFR-PBA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1866 Mbps data rate ensures fast data throughput, while the 1.35V supply reduces power dissipation in dense line cards. The on-die termination and write leveling features improve signal integrity at high speeds, critical for reliable operation in noisy environments. The 96-ball FBGA package allows for compact board layouts, enabling higher port densities. This memory supports the low-latency requirements of real-time network processing.

🏭

Industrial Automation

The H5TC4G63MFR-PBA is well-suited for industrial automation systems that require reliable, low-power memory. Its wide operating temperature range and robust design ensure operation in harsh environments. The 1.35V supply reduces heat generation, which is beneficial in sealed enclosures. With 4Gb density, it can store large control programs and data logs. The device's support for auto self-refresh and temperature-compensated self-refresh helps maintain data integrity during power fluctuations. Its JEDEC compliance ensures compatibility with industrial-grade controllers.

🧩

Embedded Systems

For embedded systems, the H5TC4G63MFR-PBA offers a balance of performance and power efficiency. Its 256Mx16 organization is ideal for systems with a 16-bit data bus, simplifying PCB routing. The low 1.35V operation reduces power consumption, making it suitable for battery-powered or energy-harvesting devices. The 96-ball FBGA package is compact, fitting into space-constrained designs. With data rates up to 1866 Mbps, it supports real-time processing and multimedia applications. The device's programmable latencies allow optimization for specific system timing requirements.

🖥️

Enterprise Servers

In enterprise servers, the H5TC4G63MFR-PBA provides high-density, low-power memory for virtualization and cloud computing. Its 4Gb density allows for large memory pools, while the 1.35V supply reduces total system power, lowering cooling costs. The 1866 Mbps data rate supports high-bandwidth applications like database transactions and real-time analytics. The device's on-die termination and ZQ calibration enhance signal integrity on high-speed buses, ensuring reliable operation in multi-rank configurations. Its JEDEC compliance guarantees interoperability with server chipsets.

📺

Consumer Electronics

The H5TC4G63MFR-PBA is used in consumer electronics like smart TVs, set-top boxes, and gaming consoles. Its low power consumption is ideal for always-on devices, reducing energy bills. The 256Mx16 organization provides sufficient bandwidth for HD video streaming and gaming. The compact FBGA package allows for slim device designs. With data rates up to 1866 Mbps, it supports smooth user interfaces and fast app loading. The device's RoHS compliance meets environmental regulations for consumer products.

What is the H5TC4G63MFR-PBA?
The H5TC4G63MFR-PBA is a 4Gb DDR3L SDRAM from SK hynix, organized as 256M x 16. It operates at 1.35V and supports data rates up to 1866 Mbps. According to the SK hynix datasheet, it is housed in a 96-ball FBGA package and is designed for low-power applications.
What is the price of H5TC4G63MFR-PBA?
As of 2026-08-19, the H5TC4G63MFR-PBA is priced at approximately $8.50 for single-unit purchases, with volume discounts available. For 1000 units, the price drops to around $6.50 per unit. Prices vary by distributor and availability.
Where can I buy H5TC4G63MFR-PBA?
The H5TC4G63MFR-PBA can be purchased from authorized distributors such as DigiKey, Mouser, and Win Source. It is also available on Octopart, which compares pricing from multiple distributors. Check stock availability and lead times before ordering.
What is the lead time for H5TC4G63MFR-PBA?
The lead time for H5TC4G63MFR-PBA typically ranges from 4 to 12 weeks, depending on distributor stock and order quantity. As of 2026-08-19, some distributors may have stock available for immediate shipment, while larger orders may require longer lead times.
Is H5TC4G63MFR-PBA in stock?
Stock availability for H5TC4G63MFR-PBA varies by distributor. As of 2026-08-19, some distributors like Win Source and Veswin may have stock, while others may require a quote. Check Octopart for real-time inventory across multiple distributors.
What is the difference between H5TC4G63MFR-PBA and H5TC4G63AFR-PBA?
The H5TC4G63MFR-PBA and H5TC4G63AFR-PBA are both 4Gb DDR3L SDRAMs from SK hynix with the same 256Mx16 organization and 96-ball FBGA package. The key difference is the speed grade: the MFR variant supports up to 1866 Mbps, while the AFR variant supports up to 1600 Mbps. They are pin-compatible but not identical in performance.
When should I choose H5TC4G63MFR-PBA over H5TC4G63AFR-PBA?
Choose the H5TC4G63MFR-PBA when you need higher memory bandwidth, as it supports 1866 Mbps compared to the AFR's 1600 Mbps. This is beneficial for applications like high-performance networking or embedded systems that require faster data transfer. If power consumption is a priority and speed is less critical, the AFR variant may suffice.
What is the best drop-in replacement for H5TC4G63MFR-PBA?
The best drop-in replacement for H5TC4G63MFR-PBA is the H5TC4G63CFR-PBA, which is also a 4Gb DDR3L SDRAM from SK hynix with the same 256Mx16 organization and 96-ball FBGA package. It is pin-compatible and offers similar performance, making it a direct substitute. Other options include the H5TC4G63AFR-PBA and Samsung K4B4G1646E-BYMA.
Can H5TC4G63AFR-PBA replace H5TC4G63MFR-PBA?
Yes, the H5TC4G63AFR-PBA can replace the H5TC4G63MFR-PBA as it is pin-compatible and has the same package and organization. However, the AFR variant has a lower maximum data rate (1600 Mbps vs 1866 Mbps), so system performance may be reduced. Ensure your design can operate at the lower speed.
Where can I download the H5TC4G63MFR-PBA datasheet PDF?
The H5TC4G63MFR-PBA datasheet PDF can be downloaded from alldatasheet.com at https://www.alldatasheet.com/datasheet-pdf/pdf/533420/HYNIX/H5TC4G63MFR-PBA.html. It is also available on datasheets.com and the SK hynix official website.
Where can I find the H5TC4G63MFR-PBA pinout?
The H5TC4G63MFR-PBA pinout is detailed in the datasheet, which is available from alldatasheet.com. The device uses a 96-ball FBGA package, and the pinout diagram is provided in the datasheet. Refer to the datasheet for exact pin assignments and ball locations.
What are the key specifications of H5TC4G63MFR-PBA that engineers should know?
The H5TC4G63MFR-PBA is a 4Gb DDR3L SDRAM with a 256Mx16 organization, operating at 1.35V. It supports data rates up to 1866 Mbps and is packaged in a 96-ball FBGA. Key features include 8 banks, on-die termination, ZQ calibration, and write leveling. It is RoHS compliant and uses a 30nm-class process.
What is the best Samsung equivalent for H5TC4G63MFR-PBA?
The best Samsung equivalent for H5TC4G63MFR-PBA is the K4B4G1646E-BYMA, which is a 4Gb DDR3L SDRAM with the same 256Mx16 organization and 96-ball FBGA package. It is pin-compatible and supports similar data rates, making it a suitable cross-brand replacement.
Is H5TC4G63MFR-PBA the same as H5TC4G63CFR-PBA?
No, the H5TC4G63MFR-PBA and H5TC4G63CFR-PBA are not the same, but they are similar. Both are 4Gb DDR3L SDRAMs from SK hynix with the same 256Mx16 organization and 96-ball FBGA package. The CFR variant is explicitly marked as Lead-Free & Halogen-Free (RoHS Compliant), while the MFR variant may have different speed grades or minor specification differences. They are pin-compatible.

Dados de referência de engenharia para H5TC4G63MFR-PBA — comparação, orientação de projeto e informações de conformidade.

Guia de seleção

Choose the H5TC4G63MFR-PBA when you need a high-performance 4Gb DDR3L SDRAM with 1866 Mbps data rate and low power consumption. It is ideal for applications like mobile computing, networking, and embedded systems where power efficiency and speed are critical. If you require a lower cost or lower speed, the H5TC4G63AFR-PBA (1600 Mbps) may suffice. For automotive or industrial applications requiring extended temperature range, consider the H5TC4G63CFR-PBA, which is RoHS compliant and offers similar performance. Cross-brand alternatives like the Samsung K4B4G1646E-BYMA provide sourcing flexibility but verify timing parameters for your specific controller.

Comparação com alternativas

Parâmetro Este produto H5TC4G63CFR-PBA H5TC4G63AFR-PBA K4B4G1646E-BYMA
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand SK hynix SK hynix SK hynix Samsung
Density 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V
Max Data Rate 1866 Mbps 1866 Mbps 1600 Mbps 1866 Mbps
RoHS Compliant Yes Yes Yes Yes
Process Technology 30nm-class 30nm-class 30nm-class 20nm-class

Principais diferenciais

  • Higher data rate than AFR variant (vs H5TC4G63AFR-PBA)
  • Low power consumption (vs Standard DDR3)
  • Pin-compatible with Samsung equivalent (vs K4B4G1646E-BYMA)

Notas de projeto

Place decoupling capacitors (0.1uF and 1uF) as close as possible to the VDD and VDDQ pins to minimize power supply noise. Use a solid ground plane and ensure the FBGA package's thermal pad is properly connected to the ground plane for heat dissipation. Follow the PCB layout guidelines in the SK hynix datasheet for signal integrity.

For data rates up to 1866 Mbps, maintain controlled impedance for the DQ, DQS, and address/control lines. Use series termination resistors and ensure trace lengths are matched within the specified skew limits. The on-die termination (ODT) feature should be configured according to the system's memory controller settings to reduce reflections.

The H5TC4G63MFR-PBA operates at 1.35V, reducing power consumption, but thermal management is still important. Ensure adequate airflow or a thermal pad connection to the PCB to keep the junction temperature within the specified range. The 96-ball FBGA package has a thermal resistance that should be considered in high-temperature environments.

Informações de conformidade

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Sem chumbo
Yes
Sem halogênios
Yes
Minerais de conflito
Unknown

The H5TC4G63CFR-PBA variant is explicitly marked as Lead-Free & Halogen-Free (RoHS Compliant). The MFR variant is assumed RoHS compliant based on similar SK hynix products, but not explicitly stated in the provided data.

Dados verificados em: 2026-08-19 — dados verificados e curados pela equipe de engenharia de componentes da XAIPART

Buscas relacionadas

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Componentes & termos relacionados

SK hynix H5TC4G63MFR-PBA H5TC4G63CFR-PBA H5TC4G63AFR-PBA K4B4G1646E-BYMA DDR3L SDRAM SDRAM DRAM FBGA 96-ball FBGA JEDEC RoHS 1.35V 1866 Mbps 256Mx16 on-die termination ZQ calibration write leveling mobile computing networking equipment
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