H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
N.º da peça: H5AN8G6NDJR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $45.11 | $45,11 |
| 10 | $42.5 | $425,00 |
| 100 | $39.8 | $3.980,00 |
| 500 | $37.2 | $18.600,00 |
| 1.000 | $35 | $35.000,00 |
H5AN8G6NDJR Visão geral
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternativas drop-in para H5AN8G6NDJR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5AN8G6NDJR (mesmo formato e footprint) — diferindo em Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5AN8G6NDJR-XNC
✅ Drop-In✓ Em estoque
$55.6818 / unidade
Ver ficha técnica →H5AN8G6NCJR-xxC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$37 / unidade
Ver ficha técnica →MT40A512M16TB-062E:R
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$60 / unidade
Ver ficha técnica →K4A8G165WB-BCRC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$12.57 / unidade
Ver ficha técnica →MT40A512M16TB-062E:IT
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
H5AN8G6NDJR Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Density | 8 Gb |
| Organização da memória | 512M x 16 |
| Taxa de dados | 3200 Mbps (DDR4-3200) |
| Tensão de alimentação | 1.2 V |
| Encapsulamento | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| Latência CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| Recursos | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
Configuração de pinos do H5AN8G6NDJR
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply (1.2V) |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply (1.2V) |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDD — Power supply (1.2V) |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDD — Power supply (1.2V) |
| Pino C2 | DQS0 — Data strobe 0 |
| Pino C3 | DQS0# — Data strobe 0 complement |
| Pino C4 | VSS — Ground |
| Pino C5 | DQS1 — Data strobe 1 |
| Pino C6 | DQS1# — Data strobe 1 complement |
| Pino C7 | VDD — Power supply (1.2V) |
| Pino C8 | DQS2 — Data strobe 2 |
| Pino C9 | DQS2# — Data strobe 2 complement |
| Pino C10 | VSS — Ground |
| Pino C11 | DQS3 — Data strobe 3 |
| Pino C12 | DQS3# — Data strobe 3 complement |
| Pino D1 | VSS — Ground |
| Pino D2 | DM0 — Data mask 0 |
| Pino D3 | DM1 — Data mask 1 |
| Pino D4 | VDD — Power supply (1.2V) |
| Pino D5 | DM2 — Data mask 2 |
| Pino D6 | DM3 — Data mask 3 |
| Pino D7 | VSS — Ground |
| Pino D8 | A0 — Address input 0 |
| Pino D9 | A1 — Address input 1 |
| Pino D10 | VDD — Power supply (1.2V) |
| Pino D11 | A2 — Address input 2 |
| Pino D12 | A3 — Address input 3 |
| Pino E1 | VDD — Power supply (1.2V) |
| Pino E2 | A4 — Address input 4 |
| Pino E3 | A5 — Address input 5 |
| Pino E4 | VSS — Ground |
| Pino E5 | A6 — Address input 6 |
| Pino E6 | A7 — Address input 7 |
| Pino E7 | VDD — Power supply (1.2V) |
| Pino E8 | A8 — Address input 8 |
| Pino E9 | A9 — Address input 9 |
| Pino E10 | VSS — Ground |
| Pino E11 | A10/AP — Address input 10 / auto precharge |
| Pino E12 | A11 — Address input 11 |
| Pino F1 | VSS — Ground |
| Pino F2 | A12 — Address input 12 |
| Pino F3 | A13 — Address input 13 |
| Pino F4 | VDD — Power supply (1.2V) |
| Pino F5 | A14 — Address input 14 |
| Pino F6 | A15 — Address input 15 |
| Pino F7 | VSS — Ground |
| Pino F8 | BA0 — Bank address 0 |
| Pino F9 | BA1 — Bank address 1 |
| Pino F10 | VDD — Power supply (1.2V) |
| Pino F11 | BA2 — Bank address 2 |
| Pino F12 | BG0 — Bank group 0 |
| Pino G1 | VDD — Power supply (1.2V) |
| Pino G2 | BG1 — Bank group 1 |
| Pino G3 | CK — Clock input |
| Pino G4 | CK# — Clock input complement |
| Pino G5 | VSS — Ground |
| Pino G6 | CKE — Clock enable |
| Pino G7 | VDD — Power supply (1.2V) |
| Pino G8 | CS# — Chip select |
| Pino G9 | RAS# — Row address strobe |
| Pino G10 | VSS — Ground |
| Pino G11 | CAS# — Column address strobe |
| Pino G12 | WE# — Write enable |
| Pino H1 | VSS — Ground |
| Pino H2 | ODT0 — On-die termination 0 |
| Pino H3 | ODT1 — On-die termination 1 |
| Pino H4 | VDD — Power supply (1.2V) |
| Pino H5 | RESET# — Asynchronous reset |
| Pino H6 | VSS — Ground |
| Pino H7 | VDD — Power supply (1.2V) |
| Pino H8 | ZQ — ZQ calibration |
| Pino H9 | VSS — Ground |
| Pino H10 | VDD — Power supply (1.2V) |
| Pino H11 | VSS — Ground |
| Pino H12 | VDD — Power supply (1.2V) |
Aplicações típicas
H5AN8G6NDJR é adequado para 6 aplicaçãos: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
Recomendado
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
Recomendado
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
Recomendado
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
Recomendado
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5AN8G6NDJR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- High density and bandwidth (vs K4A8G165WB-BCTD)
- Advanced features (vs MT40A512M16TB-062E:R)
- Low power consumption (vs K4A8G165WB-BCTD)
Notas de projeto
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
Informações de conformidade
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
